| 零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
KF4N20LI | N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D | KECKEC CORPORATION KEC株式會(huì)社 | KEC | |
KF4N20LI | N CHANNEL MOS FIELD EFFECT TRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=3.6A ?D | KECKEC CORPORATION KEC株式會(huì)社 | KEC | |
NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforLEDLightingandswitchingmodepowersupplies. FEATURES ?VDSS(Min.)=200V,ID=1A ?Dra | KECKEC CORPORATION KEC株式會(huì)社 | KEC | ||
200VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
200VN-CHANNELMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
N-ChannelMOSFET200V,3.0A,1.35(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET200V,3.0A,1.35(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=3A@TC=25℃ ·DrainSourceVoltage :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFET200V,0.85A,1.35(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET200V,0.85A,1.35(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
TMOSPOWERFET4.0AMPERES200VOLTSRDS(on)=1.2OHM | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N??hannelDPAKPowerMOSFET | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=4A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverter,p | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實(shí)業(yè)有限公司 | KEXIN | ||
N-CHANNEL200V-1.3ohm-4ATO-220POWERMOSTRANSISTOR N-CHANNEL200V-1.3?-4ATO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.3? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■150oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPE | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-CHANNEL200V-1.2ohm-4ADPAK/IPAKMESHOVERLAY??MOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY?process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformance.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,makesitsuitableincovertersforli | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
N-CHANNEL200V-1.3ohm-4ATO-220POWERMOSTRANSISTOR N-CHANNEL200V-1.3?-4ATO-220POWERMOSTRANSISTOR ■TYPICALRDS(on)=1.3? ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■150oCOPERATINGTEMPERATURE ■APPLICATIONORIENTEDCHARACTERIZATION APPLICATIONS ■HIGHCURRENT,HIGHSPE | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體集團(tuán) | STMICROELECTRONICS | ||
4A,200VN-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC | ||
4A,200VN-CHANNELPOWERMOSFET | UTCUnisonic Technologies 友順友順科技股份有限公司 | UTC |
詳細(xì)參數(shù)
- 型號(hào)：
KF4N20LI
- 制造商：
KEC
- 制造商全稱：
KEC(Korea Electronics)
- 功能描述：
N CHANNEL MOS FIELD EFFECT TRANSISTOR
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
KEC |
23+ |
TO-251 |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
KEC |
2022+ |
TO-251 |
50000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
KEC |
23+ |
IPAK(1) |
13000 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | ||
KEC |
23+ |
TO-251 |
6000 |
原裝正品，支持實(shí)單 |
詢價(jià) | ||
KEC |
2022+ |
TO-251 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
KEC |
24+ |
TO-251 |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
KEC |
2016+ |
HF |
5632 |
只做進(jìn)口原裝正品!現(xiàn)貨或者訂貨一周貨期!只要要網(wǎng)上有 |
詢價(jià) | ||
KEC |
2022+ |
2000 |
全新原裝 貨期兩周 |
詢價(jià) | |||
KEC |
23+ |
TO-251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
KEC |
2022 |
TO-251 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價(jià) |
