首頁(yè)>K9F1208Q0B-F>規(guī)格書(shū)詳情
K9F1208Q0B-F中文資料三星數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

廠商型號(hào) |
K9F1208Q0B-F |
功能描述 | 64M x 8 Bit NAND Flash Memory |
文件大小 |
767.01 Kbytes |
頁(yè)面數(shù)量 |
45 頁(yè) |
生產(chǎn)廠商 | Samsung semiconductor |
企業(yè)簡(jiǎn)稱 |
Samsung【三星】 |
中文名稱 | 三星半導(dǎo)體官網(wǎng) |
原廠標(biāo)識(shí) | ![]() |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-4-17 23:00:00 |
人工找貨 | K9F1208Q0B-F價(jià)格和庫(kù)存,歡迎聯(lián)系客服免費(fèi)人工找貨 |
K9F1208Q0B-F規(guī)格書(shū)詳情
GENERAL DESCRIPTION
Offered in 64Mx8bit the K9F1208X0B is 512M bit with spare 16M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200ms on the 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9F1208X0B¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9F1208X0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.
FEATURES
? Voltage Supply
- 1.8V device(K9F1208Q0B) : 1.70~1.95V
- 2.65V device(K9F1208D0B) : 2.4~2.9V
- 3.3V device(K9F1208U0B) : 2.7 ~ 3.6 V
? Organization
- Memory Cell Array : (64M + 2048K)bit x 8 bit
- Data Register : (512 + 16)bit x 8bit
? Automatic Program and Erase
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
? Page Read Operation
- Page Size : (512 + 16)Byte
- Random Access : 15ms(Max.)
- Serial Page Access : 50ns(Min.)
? Fast Write Cycle Time
- Program time : 200ms(Typ.)
- Block Erase Time : 2ms(Typ.)
? Command/Address/Data Multiplexed I/O Port
? Hardware Data Protection
- Program/Erase Lockout During Power Transitions
? Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
? Command Register Operation
? Intelligent Copy-Back
? Unique ID for Copyright Protection
? Package
- K9F1208X0B-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F1208X0B-GCB0/GIB0
63- Ball FBGA (8.5 x 13 , 1.0 mm width)
- K9F1208U0B-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
- K9F1208X0B-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F1208X0B-JCB0/JIB0
63- Ball FBGA - Pb-free Package
- K9F1208U0B-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F1208U0B-V,F(WSOPI ) is the same device as K9F1208U0B-Y,P(TSOP1) except package type.
產(chǎn)品屬性
- 型號(hào):
K9F1208Q0B-F
- 制造商:
SAMSUNG
- 制造商全稱:
Samsung semiconductor
- 功能描述:
64M x 8 Bit NAND Flash Memory
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
SAMSUNG/三星 |
24+ |
NA/ |
27 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票 |
詢價(jià) | ||
SAMSUNG |
2016+ |
BGA |
6000 |
公司只做原裝,假一罰十,可開(kāi)17%增值稅發(fā)票! |
詢價(jià) | ||
ON |
23+ |
TO-3 |
6500 |
全新原裝假一賠十 |
詢價(jià) | ||
SAMSUNG |
2020+ |
BGA |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
SAMSUNG/三星 |
25+ |
FBGA |
996880 |
只做原裝,歡迎來(lái)電資詢 |
詢價(jià) | ||
SAMSUNG |
24+ |
BGA |
20000 |
全新原廠原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅??! |
詢價(jià) | ||
Samsung |
2016+ |
FBGA |
6528 |
只做進(jìn)口原裝現(xiàn)貨!或訂貨,假一賠十! |
詢價(jià) | ||
SAMSUM |
23+ |
BGA |
3000 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售 |
詢價(jià) | ||
SAMSUNG/三星 |
23+ |
FBGA |
98900 |
原廠原裝正品現(xiàn)貨!! |
詢價(jià) | ||
SAMSUNG |
23+ |
BGA |
3000 |
全新原裝現(xiàn)貨 優(yōu)勢(shì)庫(kù)存 |
詢價(jià) |