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K4H511638D-UC/LCC

512Mb D-die DDR SDRAM Specification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D-UC/LCC

512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS compliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D-UCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D-UCSLASHLCC

512MbD-dieDDRSDRAMSpecification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638D-UCSLASHLCC

512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant)

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638F

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638F

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638F-LC/LCC

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638F-LCSLASHLCC

512MbF-dieDDRSDRAMSpecification

ConsumerMemory

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H511638G

ConsumerMemory

SDRAMProductGuide MemoryDivision November2007

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    K4H511638D-UC/LCC

  • 制造商：

    SAMSUNG

  • 制造商全稱(chēng)：

    Samsung semiconductor

  • 功能描述：

    512Mb D-die DDR SDRAM Specification

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
SAMSUNG
24+
TSOP
2789
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨!
 詢價(jià)
SAMSUNG
TSOP
140
正品原裝--自家現(xiàn)貨-實(shí)單可談
 詢價(jià)
SAMSUNG
23+
TSOP
18689
詢價(jià)
SAMSUNG
17+
TSOP
6200
100%原裝正品現(xiàn)貨
 詢價(jià)
SAMSUNG
24+
TSOP
162
詢價(jià)
SAMSUNG
24+
TSOP
400
原裝現(xiàn)貨假一罰十
 詢價(jià)
SAMSUNG
23+
TSSOP
5000
原裝正品,假一罰十
 詢價(jià)
SAMSUNG
2016+
TSOP
6523
只做進(jìn)口原裝現(xiàn)貨!假一賠十!
 詢價(jià)
SAMSUNG
23+
TSOP
8890
價(jià)格優(yōu)勢(shì)/原裝現(xiàn)貨/客戶至上/歡迎廣大客戶來(lái)電查詢
 詢價(jià)
SANSUNG
16+
TSOP
159
全新原裝現(xiàn)貨
 詢價(jià)
更多K4H511638D-UC/LCC供應(yīng)商 更新時(shí)間2025-3-4 16:14:00

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