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K4H510438D

512Mb D-die DDR SDRAM Specification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H510438D

DDR SDRAM Product Guide

ConsumerMemory

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H510438D-TCA0

128Mb DDR SDRAM

Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H510438D-TCA2

128Mb DDR SDRAM

Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H510438D-TCB0

128Mb DDR SDRAM

Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H510438D-TLA0

128Mb DDR SDRAM

Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H510438D-TLA2

128Mb DDR SDRAM

Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H510438D-TLB0

128Mb DDR SDRAM

Features ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe(DQS) ?Fourbanksoperation ?Differentialclockinputs(CKandCK) ?DLLalignsDQandDQStransitionwithCKtransition ?MRScyclewithaddresskeyprograms -.Readlatency2,2.5(

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H510438D-UC/LA2

512Mb D-die DDR SDRAM Specification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

K4H510438D-UC/LB0

512Mb D-die DDR SDRAM Specification

KeyFeatures ?VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 ?VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 ?Double-data-ratearchitecture;twodatatransfersperclockcycle ?Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) ?Fourbanksoperation ?Dif

SamsungSamsung semiconductor

三星三星半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    K4H510438D

  • 制造商：

    SAMSUNG

  • 制造商全稱：

    Samsung semiconductor

  • 功能描述：

    DDR SDRAM Product Guide

供應(yīng)商型號品牌批號封裝庫存備注價格
SAMSUNG
23+
BGA
5000
原裝正品,假一罰十
 詢價
SAMSUNG
23+
BGA
1223
特價庫存
 詢價
SAMSANG
19+
TSOP66
256800
原廠代理渠道,每一顆芯片都可追溯原廠；
 詢價
SAMSUNG
23+
BGAP/B
8560
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
 詢價
SAMSUNG
22+23+
TSSOP66
36634
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨
 詢價
SAMSUNG
24+
TSSOP
20000
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅！！
 詢價
SAMSUNG
20+
TSSOP66
2960
誠信交易大量庫存現(xiàn)貨
 詢價
Samsung
2022+
47
全新原裝 貨期兩周
 詢價
SAMSUNG
24+
TSSOP
35200
一級代理/放心采購
 詢價
SAMSUNG/三星
2447
BGA
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價
更多K4H510438D供應(yīng)商 更新時間2025-3-4 15:35:00

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