K4B4G0446B-MCF8中文資料三星數(shù)據(jù)手冊PDF規(guī)格書

廠商型號	K4B4G0446B-MCF8
功能描述	DDP 4Gb B-die DDR3 SDRAM Specification
文件大小	1.0854 Mbytes
頁面數(shù)量	59 頁
生產(chǎn)廠商	Samsung semiconductor
企業(yè)簡稱	Samsung【三星】
中文名稱	三星半導體官網(wǎng)
原廠標識
數(shù)據(jù)手冊	下載地址一下載地址二到原廠下載
更新時間	2025-3-4 16:11:00
人工找貨	K4B4G0446B-MCF8價格和庫存，歡迎聯(lián)系客服免費人工找貨

Key Features

? JEDEC standard 1.5V ± 0.075V Power Supply

? VDDQ = 1.5V ± 0.075V

? 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,

667MHz fCK for 1333Mb/sec/pin

? 8 Banks

? Posted CAS

? Programmable CAS Latency(posted CAS): 6, 7, 8, 9, 10

? Programmable Additive Latency: 0, CL-2 or CL-1 clock

? Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6

(DDR3-1066) and 7 (DDR3-1333)

? 8-bit pre-fetch

? Burst Length: 8 (Interleave without any limit, sequential with starting

address “000” only), 4 with tCCD = 4 which does not allow seamless

read or write [either On the fly using A12 or MRS]

? Bi-directional Differential Data-Strobe

? Internal(self) calibration : Internal self calibration through ZQ pin

(RZQ : 240 ohm ± 1)

? On Die Termination using ODT pin

? Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at

85°C < TCASE < 95 °C

? Asynchronous Reset

? Package : 78 balls FBGA - x4/x8

? All of Lead-Free products are compliant for RoHS

? All of products are Halogen-free