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JPC817

Current conversion ratio (CTR: minimum 50 Working conditions I F = 5mA, V CE =

JUXINGGuangdong Juxing Electronics Technology Co., Ltd.

廣東鉅興電子廣東鉅興電子科技有限公司

K817

Optocoupler,PhototransistorOutput

FEATURES Endstackableto2.54mm(0.1)spacing DCisolationtestvoltage5000VRMS Currenttransferratio(CTR)selectedinto groups LowtemperaturecoefficientofCTR Wideambienttemperaturerange Availableinsingle,dualandquadchannelpackages Materialcategorization:Fordefinition

VishayVishay Siliconix

威世科技威世科技半導體

K817P

Optocoupler,PhototransistorOutput

Description IntheK817P/K827PH/K847PHpartseachchannelconsistofaphototransistoropticallycoupledtoagalliumarsenideinfrared-emittingdiodeina4-pin(single);8pin(dual);16-pin(quad)plasticdualinlinepackage. Theelementsaremountedononeleadframeprovidingafixedd

VishayVishay Siliconix

威世科技威世科技半導體

K817P

Optocoupler,PhototransistorOutput

FEATURES Endstackableto2.54mm(0.1)spacing DCisolationtestvoltage5000VRMS Currenttransferratio(CTR)selectedinto groups LowtemperaturecoefficientofCTR Wideambienttemperaturerange Availableinsingle,dualandquadchannelpackages Materialcategorization:Fordefinition

VishayVishay Siliconix

威世科技威世科技半導體

K817P..

Optocoupler,PhototransistorOutput

FEATURES Endstackableto2.54mm(0.1)spacing DCisolationtestvoltage5000VRMS Currenttransferratio(CTR)selectedinto groups LowtemperaturecoefficientofCTR Wideambienttemperaturerange Availableinsingle,dualandquadchannelpackages Materialcategorization:Fordefinition

VishayVishay Siliconix

威世科技威世科技半導體

KB817

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

Kingbright

Kingbright Company LLC

KB817A

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

Kingbright

Kingbright Company LLC

KB817AB

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

Kingbright

Kingbright Company LLC

KB817A-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

Kingbright

Kingbright Company LLC

KB817AB-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

Kingbright

Kingbright Company LLC

KB817AC

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

Kingbright

Kingbright Company LLC

KB817AC-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

Kingbright

Kingbright Company LLC

KB817AD

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

Kingbright

Kingbright Company LLC

KB817AD-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

Kingbright

Kingbright Company LLC

KB817B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

Kingbright

Kingbright Company LLC

KB817-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

Kingbright

Kingbright Company LLC

KB817B-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

Kingbright

Kingbright Company LLC

KB817BC

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

Kingbright

Kingbright Company LLC

KB817BC-B

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817-B(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Leadforming(gull

Kingbright

Kingbright Company LLC

KB817BD

GENERALPURPOSEHIGHISOLATIONVOLTAGESINGLETRANSISTORTYPEPHOTOCOUPLERSERIES

DESCRIPTION 1.TheKB817(1-channel)isopticallycoupledisolatorscontainingaGaASlightemittingdiodeandanNPNsiliconphototransistor. 2.Theleadpitchis2.54mm. 3.Solidinsulationthicknessbetweenemittingdiodeandoutputphototransistor:>=0.6mm. FEATURES 1.Highisolationvolta

Kingbright

Kingbright Company LLC

供應商型號品牌批號封裝庫存備注價格
JUXING(鉅興)
23+
DIP4
6000
誠信服務,絕對原裝原盤
詢價
24+
N/A
73000
一級代理-主營優(yōu)勢-實惠價格-不悔選擇
詢價
RENESAS
23+
S/N
12048
公司主營品牌長期供應原裝現(xiàn)貨可含稅提供技術
詢價
NS
22+
QFP128
1041
⊙⊙新加坡大量現(xiàn)貨庫存,深圳常備現(xiàn)貨!歡迎查詢!⊙
詢價
23+
08
13000
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
詢價
FOXCONN/富士康
24+
68900
一站配齊 原盒原包現(xiàn)貨 朱S Q2355605126
詢價
HONHAIPRECISIONINDUSTRY
13+
NA
880000
明嘉萊只做原裝正品現(xiàn)貨
詢價
SHEC
23+
DIP
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價
SHEC
21+
DIP
10000
原裝現(xiàn)貨假一罰十
詢價
SHEC
2022
DIP
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價
更多JPC817供應商 更新時間2024-10-27 8:00:00