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JFE2140分立半導(dǎo)體產(chǎn)品的晶體管-JFET規(guī)格書(shū)PDF中文資料

JFE2140
廠商型號(hào)

JFE2140

參數(shù)屬性

JFE2140 封裝/外殼為8-SOIC(0.154",3.90mm 寬);包裝為卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶;類別為分立半導(dǎo)體產(chǎn)品的晶體管-JFET;產(chǎn)品描述:DUAL, ULTRA-LOW NOISE, LOW GATE

功能描述

JFE2140 Ultra-Low Noise, Matched, Dual, Low-Gate Current, Discrete, Audio, N?Channel JFET
DUAL, ULTRA-LOW NOISE, LOW GATE

封裝外殼

8-SOIC(0.154",3.90mm 寬)

文件大小

2.51478 Mbytes

頁(yè)面數(shù)量

33 頁(yè)

生產(chǎn)廠商 Texas Instruments
企業(yè)簡(jiǎn)稱

TI1德州儀器

中文名稱

德州儀器官網(wǎng)

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更新時(shí)間

2025-1-23 8:51:00

JFE2140規(guī)格書(shū)詳情

JFE2140屬于分立半導(dǎo)體產(chǎn)品的晶體管-JFET。由德州儀器制造生產(chǎn)的JFE2140晶體管 - JFET結(jié)柵場(chǎng)效應(yīng)晶體管 (JFET) 是用作電子控制開(kāi)關(guān)、放大器或電壓控制電阻器的器件。在柵極端子與源極端子之間施加適當(dāng)極性的電勢(shì)差就會(huì)增加電流流動(dòng)的阻力,這意味著源極端子與漏極端子之間通道中流動(dòng)的電流會(huì)更少。由于電荷流過(guò)源極與漏極端子之間的半導(dǎo)體通道,因此 JFET 不需要偏置電流。

1 Features

? Ultra-low noise:

– Voltage noise:

? 0.9 nV/√Hz at 1 kHz, IDS = 5 mA

? 1.1 nV/√Hz at 1 kHz, IDS = 2 mA

– Current noise: 1.6 fA/√Hz at 1 kHz

? Low VGS mismatch: 4 mV (max)

? Low gate current: 10 pA (max)

? Low input capacitance: 13 pF at VDS = 5 V

? High gate-to-drain and gate-to-source breakdown

voltage: –40 V

? High transconductance: 30 mS

? Packages: SOIC, 2-mm × 2-mm WSON

2 Applications

? Microphone inputs

? Hydrophones and marine equipment

? DJ controllers, mixers, and other DJ equipment

? Professional audio mixer or control surface

? Guitar amplifier and other music instrument amp

? Condition monitoring sensor

3 Description

The JFE2140 is a Burr-Brown? Audio, matchedpair

discrete JFET built using Texas Instruments'

modern, high-performance, analog bipolar process.

The JFE2140 features performance not previously

available in older discrete JFET technologies. The

JFE2140 offers excellent noise performance across

all current ranges, where the quiescent current can

be set by the user from 50 μA to 20 mA. When

biased at 5 mA, the device yields 0.9 nV/√Hz of inputreferred

noise, giving ultra-low noise performance with

extremely high input impedance (> 1 TΩ). In addition,

the matching between JFETs is tested to ±4 mV,

providing low offset and high CMRR performance

for differential pair configurations. The JFE2140 also

features integrated diodes connected to separate

clamp nodes to provide protection without the addition

of high leakage, nonlinear external diodes.

The JFE2140 can withstand a high drain-to-source

voltage of 40?V, as well as gate-to-source and gate-todrain

voltages down to –40 V. The temperature range

is specified from –40°C to +125°C.

產(chǎn)品屬性

更多
  • 產(chǎn)品編號(hào):

    JFE2140DR

  • 制造商:

    Texas Instruments

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - JFET

  • 包裝:

    卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶

  • FET 類型:

    2 N-通道(雙)

  • 不同 Vds 時(shí)輸入電容 (Ciss)(最大值):

    13pF @ 5V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    8-SOIC(0.154",3.90mm 寬)

  • 供應(yīng)商器件封裝:

    8-SOIC

  • 描述:

    DUAL, ULTRA-LOW NOISE, LOW GATE

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