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MS50N06

N-ChannelEnhancementModePowerMOSFET

BWTECH

Bruckewell Technology LTD

MTB50N06E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTB50N06EL

TMOSPOWERFETLOGICLEVEL50AMPERES60VOLTS

TMOSE-FETPowerFieldEffectTransistorsD2PAKforSurfaceMountLogicLevelTMOS(L2TMOS) N–ChannelEnhancement–ModeSiliconGate TheseTMOSPowerFETsaredesignedforhighspeed,lowlosspowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers.This

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50N06EL

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=50A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTB50N06V

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=42A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.028Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

MTB50N06V

TMOSPOWERFET42AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50N06V

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTB50N06VL

TMOSPOWERFET42AMPERES60VOLTS

TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and60voltTMOSdevices.JustaswithourTMOSE–FETdesigns,TMOSVisdesignedtowithstandhighenergy

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

MTB50N06VL

N??hannelPowerMOSFET

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

MTP50N06

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM

TMOSPOWERFET42AMPERES60VOLTSRDS(on)=0.028OHM N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50an

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
JCS
1822+
TO-252
9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
詢價(jià)
JCS
18+
TO-252
41200
原裝正品,現(xiàn)貨特價(jià)
詢價(jià)
JCS
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
S
TO-252
22+
6000
十年配單,只做原裝
詢價(jià)
S
23+
TO-252
6000
原裝正品,支持實(shí)單
詢價(jià)
吉林華微
23+
DPAK
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
詢價(jià)
JCS
24+
NA/
252
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開(kāi)增值稅票
詢價(jià)
S
22+
TO-252
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價(jià)
吉林華微
23+
DPAK
25800
吉林華微全系列在售,可訂貨
詢價(jià)
sino
23+
TO-252
10065
原裝正品,有掛有貨,假一賠十
詢價(jià)
更多JCS50N06H供應(yīng)商 更新時(shí)間2025-4-28 15:34:00