首頁 >JCS4N80FH-O-F-N-B>規(guī)格書列表
| 零件編號 | 下載 訂購 | 功能描述/絲印 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
TMOSPOWERFET4.0AMPERES800VOLTS TMOSE-FETHighEnergyPowerFETD2PAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TheD2PAKpackagehasthecapabilityofhousingalargerdiethananyexistingsurfacemountpackagewhichallowsittobeusedinapplicationsthatrequiretheuseofsurfacemountcomponentswithh | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM TMOSE-FET?PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Ina | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
N-ChannelEnhancement-ModeSiliconGate | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導體新澤西半導體產品股份有限公司 | NJSEMI | ||
TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM TMOSE-FET?PowerFieldEffectTransistorN-ChannelEnhancement-ModeSiliconGate TMOSPOWERFET4.0AMPERES800VOLTSRDS(on)=3.0OHM ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Ina | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
TMOSE-FETPOWERFIELDEFFECTTRANSISITORN-CHANNELENHANCEMENT-MODESILICONGATE | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
TMOSE-FETPOWERFIELDEFFECTTRANSISITORN-CHANNELENHANCEMENT-MODESILICONGATE | MotorolaMotorola, Inc 摩托羅拉加爾文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
4.0A800VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ | ||
4.0A800VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶電子東莞市南晶電子有限公司 | DGNJDZ |
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
SINO-MICRO |
2022+ |
TO-220F |
32500 |
原廠代理 終端免費提供樣品 |
詢價 | ||
SINO-MICRO |
23+ |
TO-220F |
79999 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
S |
23+ |
TO-220F |
6000 |
原裝正品，支持實單 |
詢價 | ||
SINO-MICRO |
2022+ |
TO-220F |
30000 |
進口原裝現貨供應,原裝 假一罰十 |
詢價 | ||
SINO-MICRO |
20+ |
TO-220F |
32500 |
現貨很近!原廠很遠!只做原裝 |
詢價 | ||
吉林華微 |
兩年內 |
NA |
995 |
實單價格可談 |
詢價 | ||
24+ |
N/A |
62000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
VBSEMI |
24+ |
con |
35960 |
查現貨到京北通宇商城 |
詢價 | ||
VBSEMI/微碧半導體 |
24+ |
TO220F |
60000 |
詢價 | |||
VBSEMI/微碧半導體 |
24+ |
TO220F |
7800 |
全新原廠原裝正品現貨,低價出售,實單可談 |
詢價 |
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