首頁(yè) >JANTX2N6058>規(guī)格書(shū)列表
零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
JANTX2N6058 | NPN DARLINGTON POWER SILICON TRANSISTOR NPNDARLINGTONPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/502 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | |
JANTX2N6058 | Package:TO-204AA,TO-3;包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè) 描述:TRANS NPN DARL 80V 12A TO3 | MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司 | Microchip | |
SiliconNPNPowerTransistor DESCRIPTION ·Built-inBase-EmitterShuntResistors ·HighDCcurrentgainhFE =750(Min)@IC=6A ·Collector-EmitterSustainingVoltage- VCEO(SUS)=80V(Min) ·Complementtotype2N6051 APPLICATIONS ·Designedforgeneralpurposeamplifierandlowfrequency switchingapplications. | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
SiliconNPNPowerTransistors | SAVANTIC Savantic, Inc. | SAVANTIC | ||
COMPLEMENTARYSILICONPOWERTRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
DARLINGTONCOMPLEMENTARYSILICON-POWERTRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
POWERCOMPLEMENTARYSILICONTRANSISTORS | COMSET Comset Semiconductor | COMSET | ||
SiliconNPNPowerTransistors | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司 | JMNIC | ||
SILICONDARLINGTONPOWERTRANSISTORS DESCRIPTION: TheCENTRALSEMICONDUCTOR2N6050,2N6057seriestypesarecomplementarysiliconDarlingtonpowertransistors,manufacturedbytheepitaxialbaseprocess,designedforhighgainamplifierandswitchingapplications. | CentralCentral Semiconductor Corp 美國(guó)中央半導(dǎo)體 | Central | ||
DARLINGTONCOMPLEMENTARYSILICON-POWERTRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS ...designedlorgeneral-purposepoweramplifierandlowfrequencyswitchingapplications FEATURES: *MonolithicConstructionwithButt-inBase-EmitterShuntResistors. *HighDCCurrentGain- | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Highcurrent;highdissipation ·DARLINGTON ·Complementtotype2N5883;2N5884 APPLICATIONS ·Theyareintendedforuseinpowerlinearandlowfrequencyswitchingapplications | SAVANTIC Savantic, Inc. | SAVANTIC | ||
DARLINGTONCOMPLEMENTARYSILICON-POWERTRANSISTORS DARLINGTON12AMPERECOMPLEMENTARYSILICONPOWERTRANSISTORS60-100VOLTS150WATTS | bocaBoca Semiconductor Corporation 博卡博卡半導(dǎo)體公司 | boca | ||
BipolarNPNDeviceinaHermeticallysealedTO3 | SEME-LAB Seme LAB | SEME-LAB | ||
POWERCOMPLEMENTARYSILICONTRANSISTORS POWERCOMPLEMENTARYSILICONTRANSISTORS The2N6050,2N6051and2N6052aresiliconepitaxial-basetransistorsinmonolithicDarlingtonconfigurationmountedinJedecTO-3metalcase. Theyareintededforuseinpowerlinearandlowfrequencyswitchingapplications. ThecomplementaryNPNtypesar | COMSET Comset Semiconductor | COMSET | ||
SiliconNPNPowerTransistors DESCRIPTION ·WithTO-3package ·Highgain ·Highcurrent ·Highdissipation ·Complementtotype2N5883/2N5884 APPLICATIONS ·Theyareintendedforuseinpowerlinearandlowfrequencyswitchingapplications | JMNICQuanzhou Jinmei Electronic Co.,Ltd. 錦美電子泉州錦美電子有限公司 | JMNIC | ||
SiliconNPNPowerTransistors | ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司 | ISC | ||
DarlingtonComplementarySiliconPowerTransistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
PowerTransistors PowerTransistors | ETCList of Unclassifed Manufacturers 未分類(lèi)制造商 | ETC | ||
DarlingtonComplementarySiliconPowerTransistors | ONSEMION Semiconductor 安森美半導(dǎo)體安森美半導(dǎo)體公司 | ONSEMI | ||
NPNDARLINGTONPOWERSILICONTRANSISTOR NPNDARLINGTONPOWERSILICONTRANSISTOR QualifiedperMIL-PRF-19500/502 | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi |
產(chǎn)品屬性
- 產(chǎn)品編號(hào):
JANTX2N6058
- 制造商:
Microchip Technology
- 類(lèi)別:
分立半導(dǎo)體產(chǎn)品 > 晶體管 - 雙極性晶體管(BJT)- 單個(gè)
- 系列:
Military, MIL-PRF-19500/502
- 包裝:
卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶
- 晶體管類(lèi)型:
NPN - 達(dá)林頓
- 不同?Ib、Ic 時(shí)?Vce 飽和壓降(最大值):
3V @ 120mA,12A
- 電流 - 集電極截止(最大值):
1mA
- 不同?Ic、Vce?時(shí) DC 電流增益 (hFE)(最小值):
1000 @ 6A,3V
- 工作溫度:
-55°C ~ 175°C(TJ)
- 安裝類(lèi)型:
通孔
- 封裝/外殼:
TO-204AA,TO-3
- 供應(yīng)商器件封裝:
TO-3
- 描述:
TRANS NPN DARL 80V 12A TO3
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Microchip Technology |
24+ |
TO-204AA,TO-3 |
30000 |
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品 |
詢(xún)價(jià) | ||
MOTOROLA/摩托羅拉 |
23+ |
TO |
5500 |
主營(yíng)品牌深圳百分百原裝現(xiàn)貨假一罰十絕對(duì)價(jià)優(yōu) |
詢(xún)價(jià) | ||
MOTOROLA/摩托羅拉 |
23+ |
TO |
75000 |
只做原裝 !全系列供應(yīng)可長(zhǎng)期供貨穩(wěn)定價(jià)格優(yōu)勢(shì)! |
詢(xún)價(jià) | ||
MOT |
8140+ |
TO |
26 |
原裝庫(kù)存有訂單來(lái)談優(yōu)勢(shì) |
詢(xún)價(jià) | ||
MOT |
23+ |
TO |
16800 |
進(jìn)口原裝現(xiàn)貨 |
詢(xún)價(jià) | ||
MOTOROLA |
24+ |
CAN |
4650 |
詢(xún)價(jià) | |||
MOT |
23+ |
TO-3 |
14968 |
優(yōu)勢(shì)庫(kù)存 |
詢(xún)價(jià) | ||
MOT |
24+ |
TO-3 |
542 |
詢(xún)價(jià) | |||
MICROSEM |
17+ |
TO-3P |
6200 |
100%原裝正品現(xiàn)貨 |
詢(xún)價(jià) | ||
MOTOROLA |
24+ |
TO-3 |
1000 |
原裝現(xiàn)貨假一罰十 |
詢(xún)價(jià) |
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