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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
JAN1N5711UBCC	文件：100 bytes Page：1 Pages	包裝：卷帶（TR）封裝/外殼：4-SMD，無引線類別：分立半導(dǎo)體產(chǎn)品二極管 - 整流器 - 單描述：SCHOTTKY DIODE	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
1N5711	文件：217.69 Kbytes Page：2 Pages	15mAAxialLeadedSchottkyBarrierDiodes Features ●Forgeneralpurposeapplications ●Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiodesfor fastswitc	SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司	SUNMATE
1N5711	文件：498.37 Kbytes Page：3 Pages	GeneralPurposeAxialLeadGlassPackagedSchottkyDiodes DescriptionandApplications Thesesilicondiodesarepackagedinahermeticaxialleadglasspackage.Varioususesincludedetecting,mixingandswitchingatlowpowerlevels.Theyaresuitableforcommercialswitchingalongwithcontrolfunctionsinnarrowbandreceivers.Thesediodescanalso	MA-COM M/A-COM Technology Solutions, Inc.	MA-COM
1N5711	文件：264.7 Kbytes Page：7 Pages	PicoSecondSwitchingSpeed Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	AVAGOAVAGO TECHNOLOGIES LIMITED 安華高	AVAGO
1N5711	文件：137.65 Kbytes Page：2 Pages	SmallSignalSchottkyDiodes VOLTAGERANGE:70VPOWERDISSIPATION:400mW Features ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 魯光電子深圳市魯光電子科技有限公司	LUGUANG
1N5711	文件：269.1 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	DSK Diode Semiconductor Korea	DSK
1N5711	文件：273.845 Kbytes Page：2 Pages	SCHOTTKYBARRIERSWITCHINGDIODE	SUNMATESUNMATE electronic Co., LTD 森美特森美特半導(dǎo)體股份有限公司 PDF上傳者：深圳市福田區(qū)吉富昌電子商行	SUNMATE
1N5711	文件：128.49 Kbytes Page：4 Pages	400mWattSmallSignalSchottkyDiode60to70Volts Features ?MoistureSensitivity:Level1perJ-STD-020C ?HighReverseBreakdownVoltage ?LowForwardVoltageDrop ?ForGeneralPurposeApplication ?Marking:Cathodebandandtypenumber ?LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC
1N5711	文件：124.62 Kbytes Page：1 Pages	SchottkyBarrierDiodesforGeneralPurposeApplications Description/Applications The1N5711,1N5712,5082-2800/10/11arepassivatedSchottkybarrierdiodeswhichuseapatented“guardring”designtoachieveahighbreakdownvoltage.Packagedinalowcostglasspackage,theyarewellsuitedforhighleveldetecting,mixing,switching,gating,logor	NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司	NJSEMI
1N5711	文件：67.45 Kbytes Page：3 Pages	SCHOTTKYBARRIERDIODES DESCRIPTION ThisSchottkybarrierdiodeismetallurgicallybondedandoffersmilitarygradequalificationsforhigh-reliabilityapplicationson“1N”prefixednumbers.ThissmalldiodeishermeticallysealedandbondedintoaDO-35glasspackage. FEATURES ?JEDECregistered1N5711-1,1N5712-1,1	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：55.97 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：36.05 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: ?Forgeneralpurposeapplications ?Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	EIC EIC discrete Semiconductors	EIC
1N5711	文件：56.73 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES FEATURES ?Forgeneralpurposeapplications ?Metal-on-siliconjunctionSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfastswitching makeitidealforprotectionofMOSdevices,steering,biasingand couplingdiodesforfast	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集團(tuán)濟(jì)南晶恒電子有限責(zé)任公司	JINANJINGHENG
1N5711	文件：30.8 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES VRRM:70V,60V FEATURES: ?Forgeneralpurposeapplications ?Metal-on-siliconSchottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeitidealforprotectionof MOSdevices,steering,biasingandcouplingdiode	SYNSEMI SynSemi，Inc.	SYNSEMI
1N5711	文件：82.78 Kbytes Page：2 Pages	400mWattSmallSignalSchottkyDiode60to70Volts Features ?HighReverseBreakdownVoltage ?LowForwardVoltageDrop ?ForGeneralPurposeApplication	CHENYIShanghai Lunsure Electronic Tech 商朗電子上海商朗電子科技有限公司	CHENYI
1N5711	文件：36.02 Kbytes Page：2 Pages	SCHOTTKYBARRIERDIODES SCHOTTKYBARRIERDIODESLEADLESSPACKAGEFORSURFACEMOUNT QualifiedperMIL-PRF-19500/444	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5711	文件：46.24 Kbytes Page：2 Pages	SMALLSIGNALSCHOTTKYDIODES VOLTAGERANGE:70VPOWERDISSIPATION:400mW FEATURES ◇Forgeneralpurposeapplications ◇fastswitchingandlowlogiclevelapplications Metalsiliconschottkybarrierdevicewhichisprotected byaPNjunctionguardring.Thelowforwardvoltage dropandfastswitchingmakeiti	BILINChangzhou Galaxy Century Microelectronics Co.,Ltd. 銀河微電常州銀河世紀(jì)微電子股份有限公司	BILIN
1N5711	文件：126.35 Kbytes Page：2 Pages	Small-SignalDiodeSchottkyDiodes Features ◆Forgeneralpurposeapplications ◆Metal-on-siliconSchottkybarrierdevicewhichisprotectedbya PNjunctionguardring.Thelowforwardvoltagedropandfast switchingmakeitidealforprotectionofMOSdevices,steering, biasingandcouplingdiodesforfastswitching	Good-Ark GOOD-ARK Electronics	Good-Ark
1N5711	文件：99.85 Kbytes Page：2 Pages	SchottkyDiodes Features ?Forgeneralpurposeapplications ?Metal-on-siliconSchottkybarrierdevicewhichis protectedbyaPNjunctionguardring.Thelowfor wardvoltagedropandfastswitchingmakeitideal forprotectionofMOSdevices,steering,biasing andcouplingdiodesforfastswit	GE GE Industrial Company	GE
1N5711	文件：110.08 Kbytes Page：2 Pages	SchottkyBarrierSwitchingDiode Features ?MoistureSensitivity:Level1perJ-STD-020C ?HighReverseBreakdownVoltage ?LowForwardVoltageDrop ?ForGeneralPurposeApplication ?Marking:Cathodebandandtypenumber ?LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignates Compliant.Seeorderinginformation	MCCMicro Commercial Components 美微科美微科半導(dǎo)體股份有限公司	MCC

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產(chǎn)品屬性

產(chǎn)品編號(hào)：
JAN1N5711UBCC
制造商：
Microchip Technology
類別：
分立半導(dǎo)體產(chǎn)品 > 二極管 - 整流器 - 單
系列：
Military, MIL-PRF-19500/444
包裝：
卷帶（TR）
二極管類型：
肖特基
速度：
小信號(hào) =< 200mA（Io），任意速度
不同?Vr、F 時(shí)電容：
2pF @ 0V，1MHz
安裝類型：
表面貼裝型
封裝/外殼：
4-SMD，無引線
供應(yīng)商器件封裝：
UB
工作溫度 - 結(jié)：
-65°C ~ 150°C
描述：
SCHOTTKY DIODE

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市高捷芯城科技有限公司	JAN1N5711UBCC	MICROCHIP(美國(guó)微芯)	23+		7350	現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費(fèi)送樣,原廠技術(shù)支持!!!	詢價(jià)
現(xiàn)代芯城（深圳）科技有限公司	JAN1N5711UBCC		24+	N/A	64000	一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳市宏捷佳電子科技有限公司	JAN1N5711UBCC	Microchip Technology	24+	UB	9350	獨(dú)立分銷商公司只做原裝誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證	詢價(jià)
深圳市納立科技有限公司	JAN1N5711UR-1		三年內(nèi)		1983	只做原裝正品	詢價(jià)
瑞航達(dá)科技(深圳)有限公司	JAN1N5711UR-1	MICROSEMI			638	原裝正品	詢價(jià)
深圳市維爾達(dá)電子有限公司	JAN1N5711UR-1	MSC	2023+		80000	一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品	詢價(jià)
深圳市艾宇欣科技有限公司	JAN1N5711UR-1	Microsemi	1941+	N/A	909	加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物	詢價(jià)
深圳市科雨電子有限公司	JAN1N5711UR-1	MICROSEMI	1809+	DO-213	326	就找我吧!--邀您體驗(yàn)愉快問購元件!	詢價(jià)
深圳市凌旭科技有限公司	JAN1N5711UR-1	MICROSEMI/美高森美	21+	NA	1773	只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨!	詢價(jià)
深圳市易訊博科技有限公司	JAN1N5711UR-1	Microsemi	22+	NA	909	加我QQ或微信咨詢更多詳細(xì)信息,	詢價(jià)

更多JAN1N5711UBCC供應(yīng)商更新時(shí)間2024-12-26 15:16:00

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