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JAN1N3011B	文件：215.72 Kbytes Page：4 Pages	10 WATT ZENER DIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JAN1N3011B	文件：100 bytes Page：1 Pages	Package：DO-203AA，DO-4，接線柱；包裝：散裝類別：分立半導(dǎo)體產(chǎn)品二極管 - 齊納 - 單描述：DIODE ZENER 150V 10W DO213AA	MicrochipMicrochip Technology 微芯科技微芯科技股份有限公司	Microchip
JAN1N3011C	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JAN1N3011D	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JAN1N3011R	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JAN1N3011RA	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JAN1N3011RB	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JAN1N3011RC	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JAN1N3011RD	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTX1N3011	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTX1N3011A	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTX1N3011B	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTX1N3011C	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTX1N3011D	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTX1N3011R	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTX1N3011RA	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTX1N3011RB	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTX1N3011RC	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTX1N3011RD	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
JANTXV1N3011	文件：215.72 Kbytes Page：4 Pages	10WATTZENERDIODES DESCRIPTION Thesehighpower10WZenerdiodesrepresentedbytheJEDECregistered1N2970thru1N3015Band1N3993thru1N4000Aseriesprovidevoltageregulationinaselectionovera3.9Vto200Vbroadrangeofvoltages.Theymaybeoperatedupto10Wwithadequatemountingandheatsinkingwith	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi

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產(chǎn)品屬性

產(chǎn)品編號：
JAN1N3011B
制造商：
Microchip Technology
類別：
分立半導(dǎo)體產(chǎn)品 > 二極管 - 齊納 - 單
系列：
Military, MIL-PRF-19500/124
包裝：
散裝
容差：
±5%
工作溫度：
-65°C ~ 175°C
安裝類型：
接線柱安裝
封裝/外殼：
DO-203AA，DO-4，接線柱
供應(yīng)商器件封裝：
DO-213AA（DO-4）
描述：
DIODE ZENER 150V 10W DO213AA

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
上海金慶電子技術(shù)有限公司	JAN1N3011B	CGG	新		3	全新原裝貨期兩周	詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	JAN1N3011B	MICROSEMI	24+	SMD	71	“芯達(dá)集團(tuán)”專營軍工百分之百原裝進(jìn)口	詢價(jià)
深圳市昊創(chuàng)電子有限公司	JAN1N3011B	Microsemi/美高森美	專業(yè)軍工	NA	1000	只做原裝正品軍工級部分訂貨	詢價(jià)
深圳市納立科技有限公司	JAN1N3011B	MICROSEMI	三年內(nèi)		1983	只做原裝正品	詢價(jià)
瑞航達(dá)科技(深圳)有限公司	JAN1N3011B	MICROSEMI			638	原裝正品	詢價(jià)
深圳市鵬順微電子科技有限公司	JAN1N3011B	Microchip	2022+	原廠原包裝	8600	全新原裝支持表配單中國著名電子元器件獨(dú)立分銷	詢價(jià)
深圳市河鋒鑫科技有限公司	JAN1N3011BR	IR	22+		6000	終端可免費(fèi)供樣,支持BOM配單	詢價(jià)
深圳市安富世紀(jì)電子有限公司	JAN1N3011BR	IR	23+		8000	只做原裝現(xiàn)貨	詢價(jià)
天津市博通航睿技術(shù)有限公司	JAN1N3011BR	IR	23+		7000		詢價(jià)
瀚佳科技(深圳)有限公司	JAN1N3011RA	MSC	24+	MODULE	2050	公司大量全新原裝正品隨時(shí)可以發(fā)貨	詢價(jià)

更多JAN1N3011B供應(yīng)商更新時(shí)間2025-1-17 16:06:00

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