訂購數(shù)量 | 價格 |
---|---|
1+ |
IXTP2N60P_VBSEMI/微碧半導(dǎo)體_MOSFET 2.0 Amps 600 V 4.7 Ohm Rds博通航睿技術(shù)
- 詳細信息
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產(chǎn)品屬性
- 類型
描述
- 型號:
IXTP2N60P
- 功能描述:
MOSFET 2.0 Amps 600 V 4.7 Ohm Rds
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商
- 企業(yè):
天津市博通航睿技術(shù)有限公司
- 商鋪:
- 聯(lián)系人:
馬總
- 手機:
18322198211
- 詢價:
- 電話:
18322198211
- 地址:
天津市南開區(qū)科研西路12號356室
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