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IXKC25N80C中文資料IXYS數(shù)據(jù)手冊PDF規(guī)格書
IXKC25N80C規(guī)格書詳情
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Electrically Isolated Back Surface
Features
? Silicon chip on Direct-Copper-Bond substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
? 3rd generation CoolMOS? 1) power MOSFET
- high blocking capability
- lowest resistance
- avalanche rated for unclamped inductive switching (UIS)
? Low thermal resistance due to reduced chip thickness
? Low drain to tab capacitance (
Applications
? Switched mode power supplies (SMPS)
? Uninterruptible power supplies (UPS)
? Power factor correction (PFC)
? Welding
? Inductive heating
Advantages
? Easy assembly: no screws or isolation foils required
? Space savings
? High power density
產(chǎn)品屬性
- 型號:
IXKC25N80C
- 功能描述:
MOSFET 25 Amps 800V 0.15 Rds
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
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23+ |
ISOPLUS220 |
213 |
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11846 |
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5000 |
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7500 |
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56000 |
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詢價 | ||
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23+ |
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19960 |
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詢價 | ||
IXYS |
22+ |
ISOPLUS220? |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
IXYS |
21+ |
ISOPLUS220? |
13880 |
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詢價 | ||
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24+ |
TO-3PL |
2050 |
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詢價 | ||
IXYS |
1931+ |
N/A |
18 |
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