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IXGX12N90C

HiPerFAST IGBT Lightspeed Series

IXYS

IXYS Corporation

IXGX12N90C

包裝:管件 封裝/外殼:TO-247-3 變式 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 900V 24A 100W PLUS247

IXYS

IXYS Corporation

12N90

12A,900VN-CHANNELPOWERMOSFET

UTCUnisonic Technologies

友順友順科技股份有限公司

12N90

FastSwitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ISC12N90C

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.95Ω(Max)@VGS=10V DESCRIPTION ·Switchmodepowersupply ·DC-DCconverters ·ACmotorcontrol

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH12N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH12N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFH12N90

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFH12N90P

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH12N90P

PolarPowerMOSFETHiPerFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw

IXYS

IXYS Corporation

IXFH12N90P

PowerMOSFET

IXYS

IXYS Corporation

IXFH12N90Q

HiPerFETPowerMOSFETsQClass

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages

IXYS

IXYS Corporation

IXFH12N90Q

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM12N90

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=12A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFM12N90

HIPERFETPowerMOSFTETs

HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.

IXYS

IXYS Corporation

IXFM12N90

HiPerFETPowerMOSFETs

IXYS

IXYS Corporation

IXFT12N90Q

HiPerFETPowerMOSFETsQClass

Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?MoldingepoxiesmeetUL94V-0 flammabilityclassification Advantages

IXYS

IXYS Corporation

IXFV12N90P

PowerMOSFET

IXYS

IXYS Corporation

IXFV12N90P

PolarPowerMOSFETHiPerFET

Polar?HiPerFET?PowerMOSFET N-ChannelEnhancementModeAvalancheRated FastIntrinsicDiode Features ?InternationalStandardPackages ?AvalancheRated ?LowPackageInductance ?FastIntrinsicDiode Advantages ?EasytoMount ?SpaceSavings ?HighPowerDensity Applications: ?Sw

IXYS

IXYS Corporation

IXFV12N90PS

PowerMOSFET

IXYS

IXYS Corporation

產(chǎn)品屬性

  • 產(chǎn)品編號:

    IXGX12N90C

  • 制造商:

    IXYS

  • 類別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 系列:

    HiPerFAST?, Lightspeed?

  • 包裝:

    管件

  • 不同?Vge、Ic 時?Vce(on)(最大值):

    3V @ 15V,12A

  • 開關(guān)能量:

    320μJ(關(guān))

  • 輸入類型:

    標(biāo)準(zhǔn)

  • 25°C 時 Td(開/關(guān))值:

    20ns/135ns

  • 測試條件:

    720V,12A,22 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類型:

    通孔

  • 封裝/外殼:

    TO-247-3 變式

  • 供應(yīng)商器件封裝:

    PLUS247?-3

  • 描述:

    IGBT 900V 24A 100W PLUS247

供應(yīng)商型號品牌批號封裝庫存備注價格
IXYS
1931+
N/A
18
加我qq或微信,了解更多詳細(xì)信息,體驗一站式購物
詢價
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗愉快問購元件!
詢價
IXYS/艾賽斯
23+
PLUS247
10000
公司只做原裝正品
詢價
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
詢價
IXYS
22+
PLUS247?3
9000
原廠渠道,現(xiàn)貨配單
詢價
IXYS
21+
PLUS247?3
13880
公司只售原裝,支持實單
詢價
IXYS/艾賽斯
23+
PLUS247
6000
原裝正品,支持實單
詢價
IXYS
2022+
PLUS247?-3
38550
全新原裝 支持表配單 中國著名電子元器件獨立分銷
詢價
IXYS/艾賽斯
22+
PLUS247
25000
只做原裝進(jìn)口現(xiàn)貨,專注配單
詢價
IXYS
24+
TO-247-3 變式
9350
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
詢價
更多IXGX12N90C供應(yīng)商 更新時間2025-1-4 10:18:00