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IXGP7N60B

HiPerFAST IGBT

Features ?Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB ?MediumfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?Uninterruptiblepowersupplies(UPS) ?

IXYS

IXYS Corporation

IXGP7N60B

包裝:管件 封裝/外殼:TO-220-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 14A 54W TO220

IXYS

IXYS Corporation

IXGP7N60BD1

HiPerFAST IGBT with Diode

Features ?Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?Uninterruptiblepowersupplies(UPS) ?Switched-modeandresonant-m

IXYS

IXYS Corporation

IXGP7N60BD1

HiPerFAST IGBT with Diode

IXYS

IXYS Corporation

IXGP7N60BD1

包裝:管件 封裝/外殼:TO-220-3 類(lèi)別:分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述:IGBT 600V 14A 80W TO220

IXYS

IXYS Corporation

IXGP7N60C

HiPerFASTIGBTLightspeedSeries

Features ?Internationalstandardpackages JEDECTO-263surface mountableandJEDECTO-220AB ?HighfrequencyIGBT ?Highcurrenthandlingcapability ?HiPerFASTTMHDMOSTMprocess ?MOSGateturn-on -drivesimplicity Applications ?Uninterruptiblepowersupplies(UPS) ?Switc

IXYS

IXYS Corporation

IXTA7N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTA7N60P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTA7N60PM

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Plasticovermoldedtabforelectrical isolation ?Internationalstandardpackage ?Avanlancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings Appli

IXYS

IXYS Corporation

IXTP7N60P

N-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTP7N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTP7N60PM

iscN-ChannelMOSFETTransistor

?FEATURES ?DrainSourceVoltage- :VDSS=600V(Min) ?Staticdrain-sourceon-resistance :RDS(on)≤1.1?@VGS=10V ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATION ?DC/DCConverter ?Idealforhigh-frequenc

ISCInchange Semiconductor Company Limited

無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司

IXTP7N60PM

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ?Plasticovermoldedtabforelectrical isolation ?Internationalstandardpackage ?Avanlancherated ?Lowpackageinductance -easytodriveandtoprotect Advantages ?Easytomount ?Spacesavings Appli

IXYS

IXYS Corporation

JCS7N60

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60B-O-B-N-B

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60C-O-C-N-B

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60F

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60FA

N-CHANNELMOSFET

APPLICATIONS 1.Highefficiencyswitchmodepowersupplies 2.Electroniclampballastsbasedonhalfbridge 3.UPS FEATURES 1.Lowgatecharge 2.LowCrss(typical21pF) 3.Fastswitching 4.100avalanchetested 5.Improveddv/dtcapability 6.RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60FA-O-F-N-B

N-CHANNELMOSFET

APPLICATIONS 1.Highefficiencyswitchmodepowersupplies 2.Electroniclampballastsbasedonhalfbridge 3.UPS FEATURES 1.Lowgatecharge 2.LowCrss(typical21pF) 3.Fastswitching 4.100avalanchetested 5.Improveddv/dtcapability 6.RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

JCS7N60F-O-F-N-B

N-CHANNELMOSFET

APPLICATIONS Highefficiencyswitchmodepowersupplies Electroniclampballastsbasedonhalfbridge UPS FEATURES Lowgatecharge LowCrss(typical23pF) Fastswitching 100avalanchetested Improveddv/dtcapability RoHSproduct

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

華微電子吉林華微電子股份有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號(hào):

    IXGP7N60B

  • 制造商:

    IXYS

  • 類(lèi)別:

    分立半導(dǎo)體產(chǎn)品 > 晶體管 - UGBT、MOSFET - 單

  • 系列:

    HiPerFAST?

  • 包裝:

    管件

  • IGBT 類(lèi)型:

    PT

  • 不同?Vge、Ic 時(shí)?Vce(on)(最大值):

    2V @ 15V,7A

  • 開(kāi)關(guān)能量:

    70μJ(開(kāi)),300μJ(關(guān))

  • 輸入類(lèi)型:

    標(biāo)準(zhǔn)

  • 25°C 時(shí) Td(開(kāi)/關(guān))值:

    9ns/100ns

  • 測(cè)試條件:

    480V,7A,22 歐姆,15V

  • 工作溫度:

    -55°C ~ 150°C(TJ)

  • 安裝類(lèi)型:

    通孔

  • 封裝/外殼:

    TO-220-3

  • 供應(yīng)商器件封裝:

    TO-220-3

  • 描述:

    IGBT 600V 14A 54W TO220

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IXYS/艾賽斯
24+
TO-220
2876
只做原廠(chǎng)渠道 可追溯貨源
詢(xún)價(jià)
IXYS
24+
TO-220
8866
詢(xún)價(jià)
IXYS
24+
TO-220
5000
只做原裝公司現(xiàn)貨
詢(xún)價(jià)
IXYS
23+
NA
19960
只做進(jìn)口原裝,終端工廠(chǎng)免費(fèi)送樣
詢(xún)價(jià)
IXYS
22+23+
TO-220
27667
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
詢(xún)價(jià)
IXYS/艾賽斯
23+
TO-220
30000
全新原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì)
詢(xún)價(jià)
IXYS/艾賽斯
23+
TO-220
10000
公司只做原裝正品
詢(xún)價(jià)
IXYS/艾賽斯
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢(xún)價(jià)
IXYS
23+
TO-220
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢(xún)價(jià)
IXYS/艾賽斯
21+
TO-220
10000
原裝現(xiàn)貨假一罰十
詢(xún)價(jià)
更多IXGP7N60B供應(yīng)商 更新時(shí)間2025-1-1 16:36:00