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零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IXFH32N50	文件：110.19 Kbytes Page：4 Pages	HiPerFET Power MOSFETs N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect ?Fastintrin	IXYS IXYS Corporation	IXYS
IXFH32N50	文件：337.31 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFH32N50Q	文件：568.74 Kbytes Page：4 Pages	HiPerFET??Power MOSFETs Q-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Moldingepox	IXYS IXYS Corporation	IXYS
IXFH32N50Q	文件：337.68 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=32A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.16Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFJ32N50Q	文件：90.21 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFET?PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated Highdv/dt,Lowtrr,HDMOS?Family Features ?Lowprofile,highpowerpackage ?Longcreepandstrikedistances ?Easyup-gradepathforTO-220 designs ?LowRDS(on)lowQgprocess ?Ruggedpolysilicongatecel	IXYS IXYS Corporation	IXYS
IXFJ32N50Q	文件：362.81 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK32N50	文件：328.55 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFK32N50Q	文件：580.16 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox	IXYS IXYS Corporation	IXYS
IXFK32N50Q	文件：114.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox	IXYS IXYS Corporation	IXYS
IXFR32N50Q	文件：92.65 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsISOPLUS247	IXYS IXYS Corporation	IXYS
IXFT32N50	文件：110.19 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ?Internationalstandardpackages ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?UnclampedInductiveSwitching(UIS)rated ?Lowpackageinductance-easytodriveandtoprotect ?Fastintrin	IXYS IXYS Corporation	IXYS
IXFT32N50Q	文件：568.74 Kbytes Page：4 Pages	HiPerFET??PowerMOSFETsQ-Class N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features ?IXYSadvancedlowQgprocess ?Lowgatechargeandcapacitances -easiertodrive -fasterswitching ?Internationalstandardpackages ?LowRDS(on) ?UnclampedInductiveSwitching(UIS)rated ?Moldingepox	IXYS IXYS Corporation	IXYS
IXFX32N50	文件：367.17 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IXFX32N50	文件：37.44 Kbytes Page：2 Pages	HiPerFETPowerMOSFET	IXYS IXYS Corporation	IXYS
IXFX32N50Q	文件：580.16 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox	IXYS IXYS Corporation	IXYS
IXFX32N50Q	文件：580.16 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class	IXYS IXYS Corporation	IXYS
IXFX32N50Q	文件：114.2 Kbytes Page：4 Pages	HiPerFETPowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt Features ●IXYSadvancedlowQgprocess ●Lowgatechargeandcapacitances -easiertodrive -fasterswitching ●Internationalstandardpackages ●LowRDS(on) ●UnclampedInductiveSwitching(UIS)rated ●Moldingepox	IXYS IXYS Corporation	IXYS
IXGH32N50B	文件：50.45 Kbytes Page：2 Pages	HiPerFASTIGBT VCES=500V IC25=60A VCE(sat)=2.0V tfi=80ns Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD Highcurrenthandlingcapability NewestgenerationHDMOSTMprocess MOSGateturn-on -drivesimplicity Appl	IXYS IXYS Corporation	IXYS
IXGH32N50BS	文件：50.45 Kbytes Page：2 Pages	HiPerFASTIGBT VCES=500V IC25=60A VCE(sat)=2.0V tfi=80ns Features InternationalstandardpackagesJEDECTO-247SMDsurfacemountableandJEDECTO-247AD Highcurrenthandlingcapability NewestgenerationHDMOSTMprocess MOSGateturn-on -drivesimplicity Appl	IXYS IXYS Corporation	IXYS
SIHFP32N50K	文件：150.49 Kbytes Page：8 Pages	PowerMOSFET	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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詳細(xì)參數(shù)

型號：
IXFH32N50
功能描述：
MOSFET 500V 32A
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市佳鑫美電子科技有限公司	IXFH32N50	IXYS	24+	TO-247	2345	原裝正品!公司現(xiàn)貨熱賣!	詢價
深圳市匯萊威科技有限公司	IXFH32N50	IXYS/艾賽斯	19+	MODULE	1290	主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126	詢價
深圳市勤思達(dá)科技有限公司	IXFH32N50	IXYS	N/A	主營模塊	190	原裝正品,現(xiàn)貨供應(yīng)	詢價
深圳市科恒偉業(yè)電子有限公司	IXFH32N50	IXYS	2016+	TO-247	6528	只做進(jìn)口原裝現(xiàn)貨!或訂貨,假一賠十!	詢價
深圳市恒創(chuàng)達(dá)實業(yè)有限公司	IXFH32N50	IXYS	17+	TO-3P	6200		詢價
深圳市一線半導(dǎo)體有限公司	IXFH32N50	IXYS	24+	TO-3P	42683		詢價
深圳市利加科技有限公司	IXFH32N50	IXYS	16+	TO-3P	10000	全新原裝現(xiàn)貨	詢價
深圳市卓越微芯電子有限公司	IXFH32N50	IXYS	2020+	TO-3P	14	百分百原裝正品真實公司現(xiàn)貨庫存本公司只做原裝可	詢價
深圳市博浩通科技有限公司	IXFH32N50	IXYS	23+	TO-3	7750	全新原裝優(yōu)勢	詢價
齊創(chuàng)科技(上海,北京,青島)有限公司	IXFH32N50	IXYS	23+	TO-3P	5000	原裝正品,假一罰十	詢價

更多IXFH32N50供應(yīng)商更新時間2024-12-31 17:07:00

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