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零件編號(hào)	下載&訂購(gòu)	功能描述	制造商&上傳企業(yè)	LOGO
IXFH26N50Q	文件：134.05 Kbytes Page：4 Pages	HiPerFET Power MOSFETs N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Internationalstandardpackages LowRDS(on) UnclampedInductiveSwitching(UIS)rated Fastswitching MoldingepoxiesmeetUL94V-0flammabilityclassification	IXYS IXYS Corporation	IXYS
IXFH26N50Q	文件：337.14 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFM26N50	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM26N50	文件：158 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFM26N50	文件：316.82 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=26A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.2Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingapplications	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFP26N50	文件：295.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andlaserdrives.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFQ26N50	文件：312.52 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=250mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFR26N50	文件：329.88 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=26A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=200mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXFR26N50	文件：34.31 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface) (ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS?Family Features ?SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation ?Lowdraintotabcapacitance(	IXYS IXYS Corporation	IXYS
IXFR26N50Q	文件：79.56 Kbytes Page：2 Pages	HiPerFETPowerMOSFETsISOPLUS247(ElectricallyIsolatedBackSurface) (ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeHighdV/dt,Lowtrr,HDMOS?Family Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance(	IXYS IXYS Corporation	IXYS
IXFT26N50	文件：158 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Corporation	IXYS
IXFT26N50Q	文件：134.05 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs N-ChannelEnhancementModeAvalancheRated,LowQg,Highdv/dt Features IXYSadvancedlowQgprocess Internationalstandardpackages LowRDS(on) UnclampedInductiveSwitching(UIS)rated Fastswitching MoldingepoxiesmeetUL94V-0flammabilityclassification	IXYS IXYS Corporation	IXYS
IXFV26N50P	文件：211.72 Kbytes Page：5 Pages	AvalancheRatedFastInstrinsicDiode VDSS=500V ID25=26A RDS(on)≤230m? trr≤200ns AvalancheRatedFastInstrinsicDiode Features ●Internationalstandardpackages ●Fastintrinsicdiode ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomou	IXYS IXYS Corporation	IXYS
IXFV26N50PS	文件：211.72 Kbytes Page：5 Pages	AvalancheRatedFastInstrinsicDiode VDSS=500V ID25=26A RDS(on)≤230m? trr≤200ns AvalancheRatedFastInstrinsicDiode Features ●Internationalstandardpackages ●Fastintrinsicdiode ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect Advantages ●Easytomou	IXYS IXYS Corporation	IXYS
IXTC26N50P	文件：571.66 Kbytes Page：5 Pages	PolarHVPowerMOSFET ElectricallyIsolatedTab,N-ChannelEnhancementMode,AvalancheRated Features SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation Lowdraintotabcapacitance( Applications DC-DCconverters	IXYS IXYS Corporation	IXYS
IXTC26N50P	文件：296.32 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXTQ26N50P	文件：269.8 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 無(wú)錫固電無(wú)錫固電半導(dǎo)體股份有限公司	ISC
IXTQ26N50P	文件：343.91 Kbytes Page：5 Pages	PolarHVTMPowerMOSFET	IXYS IXYS Corporation	IXYS
IXTQ26N50P	文件：343.91 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Corporation	IXYS
IXTT26N50P	文件：343.91 Kbytes Page：5 Pages	PolarHVPowerMOSFET	IXYS IXYS Corporation	IXYS

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詳細(xì)參數(shù)

型號(hào)：
IXFH26N50Q
功能描述：
MOSFET 500V 26A
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市昊創(chuàng)電子有限公司	IXFH26N50Q	IXYS/艾賽斯	2021+	TO-247	9450	原裝現(xiàn)貨。	詢價(jià)
深圳市富誠(chéng)威科技有限公司	IXFH26N50Q	IXYS/艾賽斯	22+	TO-247	2769	絕對(duì)原裝!公司現(xiàn)貨!	詢價(jià)
深圳市拓億芯電子有限公司	IXFH26N50Q	IXYS/艾賽斯	23+	TO-247	12500	全新原裝現(xiàn)貨,假一賠十	詢價(jià)
深圳和潤(rùn)天下電子科技有限公司	IXFH26N50Q	IXYS/艾賽斯	23+	TO-247	52388	原裝正品華強(qiáng)現(xiàn)貨	詢價(jià)
深圳市星佑電子有限公司	IXFH26N50Q	IXYS	05+	原廠原裝	1451	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市一線半導(dǎo)體有限公司	IXFH26N50Q	IXYS	24+	TO-247AD	1790		詢價(jià)
深圳市永貝爾科技有限公司	IXFH26N50Q	IXYS	23+	NA	19960	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
深圳市壹芯創(chuàng)科技有限公司	IXFH26N50Q	IXYS	22+	TO-248AD	12000	進(jìn)口原裝	詢價(jià)
上海金慶電子技術(shù)有限公司	IXFH26N50Q	IXYSCORPORATION	新		20	全新原裝貨期兩周	詢價(jià)
深圳市華斯頓科技有限公司	IXFH26N50Q	IXYS	22+23+	TO-247	44794	絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨	詢價(jià)

更多IXFH26N50Q供應(yīng)商更新時(shí)間2025-1-1 13:52:00

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