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IXFH20N50P3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH20N50P3

Preliminary Technical Information

VDSS=500V ID25=20A RDS(on)≤300m? N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMoun

IXYS

IXYS Corporation

IXFH20N50P3

Power MOSFET

IXYS

IXYS Corporation

IXFA20N50P3

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=20A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFA20N50P3

PowerMOSFET

IXYS

IXYS Corporation

IXFA20N50P3

PreliminaryTechnicalInformation

VDSS=500V ID25=20A RDS(on)≤300m? N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMoun

IXYS

IXYS Corporation

IXFP20N50P3

PreliminaryTechnicalInformation

VDSS=500V ID25=20A RDS(on)≤300m? N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMoun

IXYS

IXYS Corporation

IXFP20N50P3

PowerMOSFET

IXYS

IXYS Corporation

IXFP20N50P3M

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicRectifier Features ?PlasticOvermoldedTabforElectricalIsolation ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMount ?SpaceSavings Appli

IXYS

IXYS Corporation

IXFQ20N50P3

PowerMOSFET

IXYS

IXYS Corporation

IXFQ20N50P3

PreliminaryTechnicalInformation

VDSS=500V ID25=20A RDS(on)≤300m? N-ChannelEnhancementMode AvalancheRated FastIntrinsicRectifier Features ?FastIntrinsicRectifier ?AvalancheRated ?LowRDS(ON)andQG ?LowPackageInductance Advantages ?HighPowerDensity ?EasytoMoun

IXYS

IXYS Corporation

詳細(xì)參數(shù)

  • 型號(hào)：

    IXFH20N50P3

  • 功能描述：

    MOSFET Polar3 HiPerFET Power MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
IXYS
24+
TO-247AD(IXFH)
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢價(jià)
Littelfuse/IXYS
23+
TO-247
7814
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價(jià)
IXYS/艾賽斯
23+
TO-247
32189
原裝正品 華強(qiáng)現(xiàn)貨
 詢價(jià)
IXYS
18+
NA
3000
進(jìn)口原裝正品優(yōu)勢供應(yīng)QQ3171516190
 詢價(jià)
IXYS
1931+
N/A
18
加我qq或微信，了解更多詳細(xì)信息,體驗(yàn)一站式購物
 詢價(jià)
IXYS/艾賽斯
2021+
TO247
100500
一級(jí)代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
 詢價(jià)
IXYS
1809+
TO-247
326
就找我吧!--邀您體驗(yàn)愉快問購元件!
 詢價(jià)
IXYS
22+
NA
18
加我QQ或微信咨詢更多詳細(xì)信息,
 詢價(jià)
IXYS
22+
TO2473
9000
原廠渠道,現(xiàn)貨配單
 詢價(jià)
只回收
23+
10000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢訂貨,價(jià)格優(yōu)勢、品種
 詢價(jià)
更多IXFH20N50P3供應(yīng)商 更新時(shí)間2025-1-1 14:14:00

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