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IXFH14N60P

PolarHV HiperFET Power MOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver

IXYS

IXYS Corporation

IXFH14N60P

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH14N60P

Power MOSFET

IXYS

IXYS Corporation

IXFH14N60P3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.54Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFH14N60P3

N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier

IXYS

IXYS Corporation

IXFP14N60

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=550mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXFP14N60P

PowerMOSFET

IXYS

IXYS Corporation

IXFP14N60P

PolarHVHiperFETPowerMOSFET

N-ChannelEnhancementMode AvalancheRated FastIntrinsicDiode Features ◆Internationalstandardpackages ◆Avalancherated Advantages ◆Easytomount ◆Spacesavings ◆Highpowerdensity Applications: ◆Switched-modeandresonant-modepowersupplies ◆DC-DCConverters ◆LaserDriver

IXYS

IXYS Corporation

IXTA14N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTA14N60P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTA14N60P

EnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTP14N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP14N60P

EnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTP14N60P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTP14N60P

PolarHVTMPowerMOSFET

IXYS

IXYS Corporation

IXTP14N60PM

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IXTP14N60PM

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Corporation

IXTQ14N60P

EnhancementModePowerMOSFET

IXYS

IXYS Corporation

IXTQ14N60P

P-ChannelEnhancementModeAvalancheRated

IXYS

IXYS Corporation

IXTQ14N60P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

詳細(xì)參數(shù)

  • 型號:

    IXFH14N60P

  • 功能描述:

    MOSFET 600V 14A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商型號品牌批號封裝庫存備注價(jià)格
IXYS
24+
TO-247AD(IXFH)
30000
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IXYS/艾賽斯
23+
TO-247
52388
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Littelfuse/IXYS
23+
TO-247
7814
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IXYS
24+
TO-247
260
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IXYS
18+
NA
3000
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IXYS
1931+
N/A
18
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IXYS
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TO-247
1675
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I
23+
TO-247
10000
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IXYS
22+
NA
18
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IXYS
22+
TO2473
9000
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更多IXFH14N60P供應(yīng)商 更新時(shí)間2025-1-1 14:14:00