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ISPW20N60S5

isc N-Channel MOSFET Transistor

·DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB20N60S5

iscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-263(D2PAK)packaging ?Highspeedswitching ?Lowgateinputresistance ?Standardlevelgatedrive ?Easytouse ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Powersupply ?Switchi

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPB20N60S5

CoolMOSPowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?QualifiedaccordingtoJEDEC0)fortargetapplications ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB20N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB20N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJE

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60S5

N-ChannelMOSFETTransistor

?DESCRIPTION ?Ultralowgatecharge ?Ultraloweffectivecapacitance ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.19? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice per

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

SPP20N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJE

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60S5

CoolMOS??PowerTransistor

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPP20N60S5

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?WorldwidebestRDS(on)inTO220 ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant ?QualifiedaccordingtoJE

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPW20N60S5

iscN-ChannelMOSFETTransistor

·DESCRITION ?Improvedtransconductance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤190m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
LATTICE
23+
NA
25060
只做進(jìn)口原裝,終端工廠免費(fèi)送樣
詢價(jià)
LATTICE/萊迪斯
23+
BGA
3000
一級(jí)代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、
詢價(jià)
LATTICE/萊迪斯
21+
BGA
5000
原裝現(xiàn)貨/假一賠十/支持第三方檢驗(yàn)
詢價(jià)
LATTICE
23+
BGA
47434
##公司主營(yíng)品牌長(zhǎng)期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)
詢價(jià)
LATTICE
20+
BGA1717
35830
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票
詢價(jià)
LATTICE
2023+
BGA1717
80000
一級(jí)代理/分銷渠道價(jià)格優(yōu)勢(shì) 十年芯程一路只做原裝正品
詢價(jià)
LATTICE
24+
BGA1717
35210
一級(jí)代理/放心采購
詢價(jià)
N/A
23+
NA
1065
專業(yè)優(yōu)勢(shì)供應(yīng)
詢價(jià)
PAN
16+
SOT-423
10000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
詢價(jià)
NATIONAL
23+
SOT23-3
39215
詢價(jià)
更多ISPW20N60S5供應(yīng)商 更新時(shí)間2025-1-28 9:02:00