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ISPP12N50C3

N-Channel MOSFET Transistor

?DESCRITION ?Newrevolutionaryhighvoltagetechnology ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISPP12N50C3

N-Channel MOSFET Transistor

?DESCRITION ?Newrevolutionaryhighvoltagetechnology ?Ultraloweffectivecapacitance ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.6? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performancean

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

ISPW12N50C3

iscN-ChannelMOSFETTransistor

?DESCRITION ?ImprovedTransconductance ?FEATURES ?Staticdrain-sourceon-resistance:RDS(on)≤380m? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPA12N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA12N50C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPA12N50C3

IscN-ChannelMOSFETTransistor

?FEATURES ?WithTO-220FPackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

SPA12N50C3

CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB12N50C3

N-Channel650V(D-S)MOSFET

FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體（臺灣）有限公司

SPB12N50C3

NewrevolutionaryhighvoltagetechnologyWorldwidebestRDS(on)inTO220Ultralowgatecharge

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SPB12N50C3

CoolMOS??PowerTransistor

Feature ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Extremedv/dtrated ?Ultraloweffectivecapacitances ?Improvedtransconductance ?P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

供應商型號品牌批號封裝庫存備注價格
IS
23+
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
IS
12
210
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
 詢價
IS
23+
原裝正品現(xiàn)貨
10000
詢價
ST
24+
875
詢價
ST
68500
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨
 詢價
ST
23+
47403
##公司主營品牌長期供應100%原裝現(xiàn)貨可含稅提供技術(shù)
 詢價
ST
2023+
3000
進口原裝現(xiàn)貨
 詢價
LATTICE/萊迪斯
23+
QFN
45718
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
 詢價
LATTICE
23+
NA
25060
只做進口原裝,終端工廠免費送樣
 詢價
LAT
23+
65480
詢價
更多ISPP12N50C3供應商 更新時間2025-1-21 13:00:00

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