首頁 >ISPD06N60C3>規(guī)格書列表
零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
ISPD06N60C3 | N-Channel MOSFET Transistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | |
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
IscN-ChannelMOSFETTransistor ?FEATURES ?WithTO-220Fpackage ?Lowinputcapacitanceandgatecharge ?Lowgateinputresistance ?Reducedswitchingandconductionlosses ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ?APPLICATIONS ?Switchingapplica | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSPowerTransistor CoolMOSPowerTransistor Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Highpeakcurrentcapability ?Ultraloweffectivecapacitances ?Extremedv/dtrated ?Improvedtransconductance ?Fullyisolatedpackag | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Highpeakcurrentcapability ?Ultraloweffectivecapacitances ?Extremedv/dtrated ?Improvedtransconductance ?Pb-freeleadplating;RoHScompliant availableinHalogenfreem | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistor | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
Ultralowgatecharge | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor ?DESCRITION ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode: ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor ?DESCRIPTION ?Ultralowgatecharge ?Highpeakcurrentcapability ?FEATURES ?Staticdrain-sourceon-resistance: RDS(on)≤0.75? ?Enhancementmode ?FastSwitchingSpeed ?100avalanchetested ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Features ?Newrevolutionaryhighvoltagetechnology ?Ultralowgatecharge ?Periodicavalancherated ?Highpeakcurrentcapability ?Ultraloweffectivecapacitances ?Extremedv/dtrated ?Improvedtransconductance | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon |
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Isocom |
2339+ |
NA |
5825 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存! |
詢價(jià) | ||
ISOCOM |
12+ |
DIPSOP |
23108 |
原裝現(xiàn)貨 |
詢價(jià) | ||
ISOCOM |
24+ |
40000 |
詢價(jià) | ||||
ISOCOM |
23+ |
22646 |
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種 |
詢價(jià) | |||
ISOCOM |
23+ |
DIP-6 |
9888 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
ISOCOM |
23+ |
14+ |
38493 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | ||
LAT |
05+ |
原廠原裝 |
4285 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
LAT |
23+ |
65480 |
詢價(jià) | ||||
Lattice |
8850 |
5 |
公司優(yōu)勢(shì)庫存 熱賣中! |
詢價(jià) | |||
IATTICE |
24+ |
DIP |
2987 |
絕對(duì)全新原裝現(xiàn)貨供應(yīng)! |
詢價(jià) |
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