首頁(yè) >ISL9000IRBBZ>規(guī)格書(shū)列表
| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
ISL9000IRBBZ | Dual LDO with Low Noise, Very High PSRR, and Low IQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | |
ISL9000IRBBZ | Marking:DABB;Package:10Ld3x3DFN;Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
ISL9000IRBBZ | 包裝：卷帶（TR） 封裝/外殼：10-VFDFN 裸露焊盤(pán) 類(lèi)別：集成電路（IC） 線性 + 開(kāi)關(guān)穩(wěn)壓器 描述：IC REG LINEAR 1.5V/1.5V 10DFN | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | |
ISL9000IRBBZ | 包裝：卷帶（TR） 封裝/外殼：10-VFDFN 裸露焊盤(pán) 類(lèi)別：集成電路（IC） 穩(wěn)壓器 - 線性 描述：IC REG LINEAR 1.5V/1.5V 10DFN | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | |
包裝：卷帶（TR） 封裝/外殼：10-VFDFN 裸露焊盤(pán) 類(lèi)別：集成電路（IC） 線性 + 開(kāi)關(guān)穩(wěn)壓器 描述：IC REG LINEAR 1.5V/1.5V 10DFN | Renesas Electronics America Inc Renesas Electronics America Inc | Renesas Electronics America Inc | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanind | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRR,andLowIQ DualLDOwithLowNoise,VeryHighPSRR,andLowIQ ISL9000isahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil |
產(chǎn)品屬性
- 產(chǎn)品編號(hào)：
ISL9000IRBBZ
- 制造商：
Renesas Electronics America Inc
- 類(lèi)別：
集成電路（IC） > 線性 + 開(kāi)關(guān)穩(wěn)壓器
- 包裝：
卷帶（TR）
- 輸出配置：
正
- 輸出類(lèi)型：
固定
- 電壓 - 輸入（最大值）：
6.5V
- 電壓 - 輸出（最小值/固定）：
1.5V，1.5V
- 電壓降（最大值）：
-，-
- 電流 - 輸出：
300mA，300mA
- 控制特性：
使能，上電復(fù)位
- 保護(hù)功能：
過(guò)流，超溫，欠壓鎖定（UVLO）
- 工作溫度：
-40°C ~ 85°C
- 安裝類(lèi)型：
表面貼裝型
- 封裝/外殼：
10-VFDFN 裸露焊盤(pán)
- 供應(yīng)商器件封裝：
10-DFN（3x3）
- 描述：
IC REG LINEAR 1.5V/1.5V 10DFN
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
intersil |
16+ |
原廠封裝 |
10000 |
全新原裝正品,代理優(yōu)勢(shì)渠道供應(yīng),歡迎來(lái)電咨詢(xún) |
詢(xún)價(jià) | ||
INTERSIL |
20+ |
DFN-10 |
1001 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢(xún)價(jià) | ||
Intersil |
22+ |
10DFN |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢(xún)價(jià) | ||
Intersil |
23+ |
10DFN |
9000 |
原裝正品，支持實(shí)單 |
詢(xún)價(jià) | ||
Renesas |
22+ |
10-VFDFN |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢(xún)價(jià) | ||
XICOR |
23+ |
DFN10(3x3) |
6000 |
誠(chéng)信服務(wù)，絕對(duì)原裝原盤(pán) |
詢(xún)價(jià) | ||
Intersil |
2318+ |
VFDFN-10 |
6890 |
長(zhǎng)期供貨進(jìn)口原裝熱賣(mài)現(xiàn)貨 |
詢(xún)價(jià) | ||
Renesas Electronics America In |
24+ |
10-VFDFN 裸露焊盤(pán) |
9350 |
獨(dú)立分銷(xiāo)商 公司只做原裝 誠(chéng)心經(jīng)營(yíng) 免費(fèi)試樣正品保證 |
詢(xún)價(jià) | ||
INTERSIL |
23+ |
DFN-10 |
7 |
現(xiàn)貨庫(kù)存 |
詢(xún)價(jià) | ||
Intersil |
24+ |
10-DFN |
7369 |
原裝現(xiàn)貨 |
詢(xún)價(jià) |
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