首頁 >ISL9000AIRCCZ>規(guī)格書列表
| 零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
ISL9000AIRCCZ | Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | |
ISL9000AIRCCZ | Dual LDO with Low Noise, Very High PSRR and Low IQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | |
ISL9000AIRCCZ | Marking:DDPA;Package:10Ld3x3DFN;Dual LDO with Low Noise, Very High PSRR and Low IQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | |
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司 | RENESAS | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing 300mAcurrentfromeachoutput.Ithasalowstandbycurrent andveryhighPSRRandisstablewithoutputcapacitanceof 1μFto10μFwithESRofupto200mΩ. ThedeviceintegratesanindividualPower-On-Reset(POR) functionforeach | Intersil Intersil Corporation | Intersil | ||
DualLDOwithLowNoise,VeryHighPSRRandLowIQ DualLDOwithLowNoise,VeryHighPSRRandLowIQ ISL9000AisahighperformancedualLDOcapableofsourcing300mAcurrentfromeachoutput.IthasalowstandbycurrentandveryhighPSRRandisstablewithoutputcapacitanceof1μFto10μFwithESRofupto200mΩ. Thedeviceintegratesanin | Intersil Intersil Corporation | Intersil |
詳細參數(shù)
- 型號：
ISL9000AIRCCZ
- 功能描述：
IC REG LDO 1.8V .3A 10-DFN
- RoHS：
是
- 類別：
集成電路(IC) >> PMIC - 穩(wěn)壓器 - 線性
- 系列：
-
- 標(biāo)準(zhǔn)包裝：
1
- 穩(wěn)壓器拓?fù)浣Y(jié)構(gòu)：
正，可調(diào)式
- 輸出電壓：
1.25 V ~ 10 V
- 輸入電壓：
2.9 V ~ 12 V 電壓 -
- 壓降（標(biāo)準(zhǔn)）：
-
- 穩(wěn)壓器數(shù)量：
1 電流 -
- 輸出：
700mA 電流 -
- 限制（最?。?/span>
-
- 工作溫度：
-40°C ~ 85°C
- 安裝類型：
表面貼裝
- 封裝/外殼：
10-VFDFN 裸露焊盤
- 供應(yīng)商設(shè)備封裝：
10-DFN（3x3）
- 包裝：
Digi-Reel®
- 其它名稱：
NCV8535MNADJR2GOSDKR
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞薩 |
23+ |
DFN-10 |
1000 |
全新、原裝 |
詢價 | ||
Intersil |
24+ |
10-DFN |
4984 |
原裝現(xiàn)貨 |
詢價 | ||
Intersil |
1931+ |
N/A |
1023 |
加我qq或微信，了解更多詳細信息,體驗一站式購物 |
詢價 | ||
INTERSIL |
20+ |
DFN-10 |
4854 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
RENESAS(瑞薩電子) |
22+ |
NA |
500000 |
萬三科技,秉承原裝,購芯無憂 |
詢價 | ||
Intersil |
22+ |
10DFN |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Intersil |
23+ |
10DFN |
9000 |
原裝正品，支持實單 |
詢價 | ||
RENESAS(瑞薩)/IDT |
23+ |
DFN10(3x3) |
7350 |
現(xiàn)貨供應(yīng),當(dāng)天可交貨!免費送樣,原廠技術(shù)支持!!! |
詢價 | ||
RENESAS(瑞薩)/IDT |
23+ |
DFN10(3x3) |
6000 |
誠信服務(wù)，絕對原裝原盤 |
詢價 | ||
Intersil |
2318+ |
VFDFN-10 |
6890 |
長期供貨進口原裝熱賣現(xiàn)貨 |
詢價 |
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