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ISL6208BIRZ-T集成電路(IC)的柵極驅(qū)動器規(guī)格書PDF中文資料

ISL6208BIRZ-T
廠商型號

ISL6208BIRZ-T

參數(shù)屬性

ISL6208BIRZ-T 封裝/外殼為8-VFDFN 裸露焊盤;包裝為管件;類別為集成電路(IC)的柵極驅(qū)動器;產(chǎn)品描述:IC GATE DRVR HALF-BRIDGE 8DFN

功能描述

High Voltage Synchronous Rectified Buck MOSFET Drivers

封裝外殼

8-VFDFN 裸露焊盤

文件大小

1.12908 Mbytes

頁面數(shù)量

13

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-5-21 12:22:00

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ISL6208BIRZ-T規(guī)格書詳情

The ISL6208 and ISL6208B are high frequency, dual MOSFET

drivers, optimized to drive two N-Channel power MOSFETs in a

synchronous-rectified buck converter topology. They are

especially suited for mobile computing applications that

require high efficiency and excellent thermal performance.

These drivers, combined with an Intersil multiphase Buck

PWM controller, form a complete single-stage core-voltage

regulator solution for advanced mobile microprocessors.

ISL6208 and ISL6208B have the same function but different

packages. The descriptions in this datasheet are based on

ISL6208 and also apply to ISL6208B.

The ISL6208 features 4A typical sinking current for the lower

gate driver. This current is capable of holding the lower

MOSFET gate off during the rising edge of the Phase node. This

prevents shoot-through power loss caused by the high dv/dt of

phase voltages. The operating voltage matches the 30V

breakdown voltage of the MOSFETs commonly used in mobile

computer power supplies.

The ISL6208 also features a three-state PWM input that,

working together with Intersil’s multiphase PWM controllers,

will prevent negative voltage output during CPU shutdown. This

feature eliminates a protective Schottky diode usually seen in

a microprocessor power systems.

MOSFET gates can be efficiently switched up to 2MHz using

the ISL6208. Each driver is capable of driving a 3000pF load

with propagation delays of 8ns and transition times under

10ns. Bootstrapping is implemented with an internal Schottky

diode. This reduces system cost and complexity, while allowing

the use of higher performance MOSFETs. Adaptive

shoot-through protection is integrated to prevent both

MOSFETs from conducting simultaneously.

A diode emulation feature is integrated in the ISL6208 to

enhance converter efficiency at light load conditions. This

feature also allows for monotonic start-up into pre-biased

outputs. When diode emulation is enabled, the driver will allow

discontinuous conduction mode by detecting when the

inductor current reaches zero and subsequently turning off the

low side MOSFET gate.

Features

? Dual MOSFET drives for synchronous rectified bridge

? Adaptive shoot-through protection

? 0.5? On-resistance and 4A sink current capability

? Supports high switching frequency up to 2MHz

- Fast output rise and fall time

- Low propagation delay

? Three-state PWM input for power stage shutdown

? Internal bootstrap schottky diode

? Low bias supply current (5V, 80μA)

? Diode emulation for enhanced light load efficiency and prebiased start-up applications

? VCC POR (power-on-reset) feature integrated

? Low three-state shutdown holdoff time (typical 160ns)

? Pin-to-pin compatible with ISL6207

? QFN and DFN package:

- Compliant to JEDEC PUB95 MO-220

QFN - Quad flat no leads - package outline

DFN - Dual flat no leads - package outline

- Near chip scale package footprint, which improves PCB

efficiency and has a thinner profile

? Pb-free (RoHS compliant)

Applications

? Core voltage supplies for Intel? and AMD? mobile

microprocessors

? High frequency low profile DC/DC converters

? High current low output voltage DC/DC converters

? High input voltage DC/DC converters

產(chǎn)品屬性

  • 產(chǎn)品編號:

    ISL6208BIRZ-T

  • 制造商:

    Renesas Electronics America Inc

  • 類別:

    集成電路(IC) > 柵極驅(qū)動器

  • 包裝:

    管件

  • 驅(qū)動配置:

    半橋

  • 通道類型:

    同步

  • 柵極類型:

    N 溝道 MOSFET

  • 電壓 - 供電:

    4.5V ~ 5.5V

  • 邏輯電壓?- VIL,VIH:

    0.5V,2V

  • 電流 - 峰值輸出(灌入,拉出):

    2A,2A

  • 輸入類型:

    非反相

  • 上升/下降時間(典型值):

    8ns,8ns

  • 工作溫度:

    -40°C ~ 125°C(TJ)

  • 安裝類型:

    表面貼裝型

  • 封裝/外殼:

    8-VFDFN 裸露焊盤

  • 供應(yīng)商器件封裝:

    8-DFN(2x2)

  • 描述:

    IC GATE DRVR HALF-BRIDGE 8DFN

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
RENESAS/INTE
23+
QFN8
6000
正規(guī)渠道,只有原裝!
詢價
RENESAS/INTE
2024
QFN8
12396
全新原裝正品,現(xiàn)貨銷售
詢價
RENESAS/INTE
23+
QFN8
10065
原裝正品,有掛有貨,假一賠十
詢價
RENESASINTE
22+23+
QFN8
8000
新到現(xiàn)貨,只做原裝進口
詢價
RENESAS/INTE
23+
QFN8
6000
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價
RENESAS/瑞薩
22+
QFN8
6000
原裝正品
詢價
RENESAS(瑞薩)/IDT
2021+
DFN-8-EP(2x2)
499
詢價
RENESAS(瑞薩)/IDT
2447
DFN-8-EP(2x2)
315000
6000個/圓盤一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,
詢價
Intersil
2318+
VDFN-8
6890
長期供貨進口原裝熱賣現(xiàn)貨
詢價
Intersil
23+
8-DFN-EP2x2
7300
專注配單,只做原裝進口現(xiàn)貨
詢價