IS42S16100C1集成電路（IC）的存儲器規(guī)格書PDF中文資料

DESCRIPTION

ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES

? Clock frequency: 200, 166, 143 MHz

? Fully synchronous; all signals referenced to a positive clock edge

? Two banks can be operated simultaneously and independently

? Dual internal bank controlled by A11 (bank select)

? Single 3.3V power supply

? LVTTL interface

? Programmable burst length – (1, 2, 4, 8, full page)

? Programmable burst sequence: Sequential/Interleave

? 4096 refresh cycles every 64 ms

? Random column address every clock cycle

? Programmable CAS latency (2, 3 clocks)

? Burst read/write and burst read/single write operations capability

? Burst termination by burst stop and precharge command

? Byte controlled by LDQM and UDQM

? Industrial temperature up to 143 MHz

? Packages 400-mil 50-pin TSOP-II, 60-ball fBGA

? Lead-free package option