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IRLU024

Power MOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLU024

Power MOSFET

FEATURES ?DynamicdV/dtrating ?Surface-mount(IRLR024,SiHLR024) ?Straightlead(IRLU024,SiHLU024) ?Availableintapeandreel ?Logic-levelgatedrive ?RDS(on)specifiedatVGS=4Vand5V ?Fastswitching ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.v

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLU024

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLU024

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLU024

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLU024N

HEXFET Power MOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewel

IRF

International Rectifier

IRLU024N

Logic-Level Gate Drive

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewel

IRF

International Rectifier

IRLU024NPBF

HEXFET Power MOSFET

Description FifthGenerationHEXFET?PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewel

IRF

International Rectifier

IRLU024PBF

Power MOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.? TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLU024Z

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp

IRF

International Rectifier

IRLU024ZPBF

AUTOMOTIVE MOSFET

Description SpecificallydesignedforAutomotiveapplications,thisHEXFET?PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr

IRF

International Rectifier

IRLU024A

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLU024N

Logic-Level Gate Drive

KERSEMI

Kersemi Electronic Co., Ltd.

IRLU024N

isc N-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

IRLU024NPBF

N-Channel 60 V (D-S) MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司

IRLU024PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRLU024PBF

Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號：

    IRLU024

  • 功能描述：

    MOSFET N-Chan 60V 14 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

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IR
23+
TO-251
35890
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IR
12+
TO-251
15000
全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
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IR
23+
NULL
1005
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IR
23+
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11846
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IR
1822+
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9852
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
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IR/VISH
21+
65230
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IR
21+
TO-251
30000
只做正品原裝現(xiàn)貨
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VISHAY
1809+
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1675
就找我吧!--邀您體驗(yàn)愉快問購元件!
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VISHAY
22+
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32350
原裝正品 假一罰十 公司現(xiàn)貨
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IR/VISHAY
23+
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10000
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更多IRLU024供應(yīng)商 更新時(shí)間2024-11-17 14:00:00

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