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IRLR3705ZPBF中文資料IRF數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
IRLR3705ZPBF規(guī)格書(shū)詳情
Description
Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
? Logic Level
? Advanced Process Technology
? Ultra Low On-Resistance
? 175°C Operating Temperature
? Fast Switching
? Repetitive Avalanche Allowed up to Tjmax
? Lead-Free
產(chǎn)品屬性
- 型號(hào)：
IRLR3705ZPBF
- 功能描述：
MOSFET 55V 1 N-CH HEXFET 8mOhms 44nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
21+ |
TO-252-2(DPAK) |
6000 |
原裝現(xiàn)貨正品 |
詢價(jià) | ||
IR(國(guó)際整流器) |
23+ |
NA/ |
8735 |
原廠直銷(xiāo),現(xiàn)貨供應(yīng),賬期支持! |
詢價(jià) | ||
INFINEON/英飛凌 |
2020+ |
NA |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
詢價(jià) | ||
IR |
24+ |
D-pak |
35200 |
一級(jí)代理/放心采購(gòu) |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
TO-252-2(DPAK) |
25000 |
原裝正品,假一賠十! |
詢價(jià) | ||
IR |
T0-252 |
100 |
一級(jí)代理,專注軍工、汽車(chē)、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | |||
IR |
22+ |
TO-252 |
9800 |
只做原裝正品假一賠十!正規(guī)渠道訂貨! |
詢價(jià) | ||
Infineon/英飛凌 |
23+ |
TO-252-2(DPAK) |
25630 |
原裝正品 |
詢價(jià) | ||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價(jià) | ||
IR |
24+ |
TO-252 |
58000 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
詢價(jià) |
