首頁 >IRLR/U230A>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRLR/U230A | Advanced Power MOSFET BVDSS=200V RDS(on)=0.4? ID=7.5A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.335?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | |
AdvancedPowerMOSFET BVDSS=200V RDS(on)=0.4? ID=7.5A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.335?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
AdvancedPowerMOSFET | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
AdvancedPowerMOSFET BVDSS=200V RDS(on)=0.4? ID=7.5A FEATURES ?AvalancheRuggedTechnology ?RuggedGateOxideTechnology ?LowerInputCapacitance ?ImprovedGateCharge ?ExtendedSafeOperatingArea ?LowerLeakageCurrent:10μA(Max.)@VDS=200V ?LowerRDS(ON):0.335?(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
iscEpitaxialSiliconAvalanchephotodiode DESCRIPTION ?Highgainatlowbiasvoltage ?Lowcose ?APDwith0.04mm2activearea ?230umdiameteractivearea ?Lowcapacitance ?Optimumgain:50-60 ?MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ?Laserrangefinder ?Highspee | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
UltrafastRectifier | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PLASTIC-CASEJUNCTIONFIELD-EFFECTTRANSISTORS N-ChannelJFETs | ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商 | ETC1 | ||
N-ChannelSiliconJunctionField-EffectTransistor N-ChannelSiliconJunctionField-EffectTransistor ?AudioAmplifiers | InterFET InterFET Corporation | InterFET | ||
P-ChannelEnhancementModeVerticalD-MOSTransistor ■Features ●VDS(V)=-300V ●ID=-0.21A(VGS=-10V) ●RDS(ON) | KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司 | KEXIN | ||
SiliconSpreadingResistanceTemperatureSensorinSurfaceMountTechnology Features ?TemperaturedependentResistorwithPositiveTemperatureCoefficient ?SMDplasticpackageforverysmallthermaltimeconstants ?Fastresponse ?Highreliabilityduetomultilayergoldcontacts ?n-conductingsiliconcrystal ?Polarityindependentduetosymmetricalconstruction | SIEMENSSiemens Ltd 西門子德國西門子股份公司 | SIEMENS | ||
SiliconTemperatureSensors Features ?Temperaturedependentresistorwithpositivetemperaturecoefficient ?Temperaturerange–50°Cto+150°C(–60Fto300F) ?AvailableinSMDorleadedorcustomizedpackages ?Linearoutput ?Excellentlongtermstability ?Polarityindependentduetosymmetricalc | InfineonInfineon Technologies AG 英飛凌英飛凌科技股份公司 | Infineon | ||
HDSLCOMMONMODECHOKE | RHOMBUS-IND Rhombus Industries Inc. | RHOMBUS-IND | ||
GREENOVALLAMPLED GREENOVALLAMPLED | SEOUL Seoul Semiconductor Co., Ltd. | SEOUL | ||
GREENOVALLAMPLED GREENOVALLAMPLED | SEOUL Seoul Semiconductor Co., Ltd. | SEOUL | ||
NoiseFilters | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
NoiseFilters | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
NoiseFilters | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC | ||
NoiseFilters | NECRenesas Electronics America 瑞薩日本瑞薩電子株式會社 | NEC |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
1415+ |
TO-252 |
28500 |
全新原裝正品,優(yōu)勢熱賣 |
詢價 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
21+ |
TO-252 |
30000 |
只做正品原裝現(xiàn)貨 |
詢價 | ||
IR |
22+ |
TO-252 |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
IR |
23+ |
TO-252 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-252 |
8000 |
專注配單,只做原裝進口現(xiàn)貨 |
詢價 | ||
IR |
23+ |
TO-252 |
7000 |
詢價 |
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