IRLI630G中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRLI630G規(guī)格書詳情
VDSS = 200V
RDS(on) = 0.40?
ID = 6.2A
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Isolated Package
● High Voltage Isolation = 2.5KVRMS
● Sink to Lead Creepage Dist. 4.8mm
● Logic-Level Gate Drive
● RDS(ON) Specified at VGS = 4V & 5V
● Fast Switching
● Ease of paralleling
產(chǎn)品屬性
- 型號:
IRLI630G
- 功能描述:
MOSFET N-Chan 200V 6.2 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
22+ |
TO2203 Isolated Tab |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
VBSEMI/微碧半導(dǎo)體 |
24+ |
TO220F |
48000 |
臺積電晶圓長電封裝微碧原裝可長久大量供應(yīng) |
詢價 | ||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
詢價 | |||
SILICONIXVISHAY |
22+ |
N/A |
12245 |
現(xiàn)貨,原廠原裝假一罰十! |
詢價 | ||
SILICONIXVISHAY |
21+ |
NA |
1820 |
只做原裝,一定有貨,不止網(wǎng)上數(shù)量,量多可訂貨! |
詢價 | ||
IR |
24+ |
TO-220F |
16800 |
絕對原裝進口現(xiàn)貨,假一賠十,價格優(yōu)勢!? |
詢價 | ||
VISHAY |
20+ |
na |
65790 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
原裝正品 |
23+ |
TO-220 |
28520 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
IR |
2016+ |
TO-220F |
6528 |
房間原裝進口現(xiàn)貨假一賠十 |
詢價 | ||
IR |
0424+ |
TO-220F |
3400 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 |