IRFU9120中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書
IRFU9120規(guī)格書詳情
These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate-drive power. They can be operated directly from integrated circuits.
Features
? 5.6A, 100V
? rDS(ON) = 0.600?
? Temperature Compensating PSPICE? Model
? Peak Current vs Pulse Width Curve
? UIS Rating Curve
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
產(chǎn)品屬性
- 型號：
IRFU9120
- 功能描述：
MOSFET P-Chan 100V 5.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
TO-251 |
10000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) | ||
VISHAY |
24+ |
TO-251 |
12000 |
VISHAY專營進(jìn)口原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
IR |
22+ |
TO-251 |
9000 |
原裝正品 |
詢價(jià) | ||
IR |
2023+ |
TO-251 |
6893 |
十五年行業(yè)誠信經(jīng)營,專注全新正品 |
詢價(jià) | ||
VISHAY |
21+ |
TO-251 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價(jià) | ||
IR |
2020+ |
TO-251 |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
詢價(jià) | ||
IR/VISHAY |
22+ |
TO-251 |
20000 |
保證原裝正品,假一陪十 |
詢價(jià) | ||
IRF |
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | |||
VISHAY |
20+ |
TO-251 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
IR |
24+ |
TO-252 |
5000 |
只做原廠渠道 可追溯貨源 |
詢價(jià) |
