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IRFY430

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRFY430C

N-ChannelMOSFETinaHermeticallysealedTO257ABMetalPackage.

SEME-LAB

Seme LAB

IRFY430C

POWERMOSFETTHRU-HOLE(TO-257AA)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRF

International Rectifier

IRFY430C

SimpleDriveRequirements

IRF

International Rectifier

IRFY430CM

POWERMOSFETN-CHANNEL(BVdss=500V,Rd(on)=1.5ohm,Id=4.5A)

POWERMOSFETTHRU-HOLE(TO-257AA) HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-e

IRF

International Rectifier

IRFY430M

N-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS

SEME-LAB

Seme LAB

IRGB430

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB430U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

IRGB430U

FitRate/EquivalentDeviceHours

IRF

International Rectifier

IRGP430U

INSULATEDGATEBIPOLARTRANSISTOR(Vces=500V,@Vge=15V,Ic=15A)

Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof

IRF

International Rectifier

詳細參數(shù)

  • 型號：

    IRFU430BTU

  • 功能描述：

    MOSFET 500V Single

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
onsemi(安森美)
23+
IPAK
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FSC/ON
23+
原包裝原封 □□
6609
原裝進口特價供應 QQ 1304306553 更多詳細咨詢 庫存
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FAIRCHILD
24+
35200
一級代理/放心采購
 詢價
FAIRCHILD/仙童
23+
36530
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
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FSC
22+
NA
27003
全新原裝正品現(xiàn)貨
 詢價
FAIRCHILD
2023+
SMD
5040
安羅世紀電子只做原裝正品貨
 詢價
VB
21+
TO-251
10000
原裝現(xiàn)貨假一罰十
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I
TO-251
22+
6000
十年配單,只做原裝
 詢價
I
23+
TO-251
6000
原裝正品，支持實單
 詢價
I
22+
TO-251
25000
只做原裝進口現(xiàn)貨,專注配單
 詢價
更多IRFU430BTU供應商 更新時間2025-3-12 13:44:00

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