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IRFR3710ZPBF中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書
IRFR3710ZPBF規(guī)格書詳情
Description
This HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Multiple Package Options
● Lead-Free
產(chǎn)品屬性
- 型號：
IRFR3710ZPBF
- 功能描述：
MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR原裝特價 |
TO-252 |
2000 |
原裝長期供貨! |
詢價 | |||
IR |
24+ |
TO-252 |
3150 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
IR |
23+ |
TO-252 |
3041 |
原裝正品代理渠道價格優(yōu)勢 |
詢價 | ||
IR |
23+ |
DPAK |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
INFINEON |
23+ |
8000 |
只做原裝現(xiàn)貨 |
詢價 | |||
IR |
23+ |
98000 |
詢價 | ||||
IR |
2024+ |
N/A |
70000 |
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng) |
詢價 | ||
IR |
24+ |
TO-252 |
140 |
詢價 | |||
IR |
TO-252 |
125000 |
一級代理原裝正品,價格優(yōu)勢,長期供應(yīng)! |
詢價 | |||
IR |
2021+ |
TO-252 |
3041 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 |
