首頁>IRFR220TRPBF>規(guī)格書詳情
IRFR220TRPBF中文資料KERSEMI數據手冊PDF規(guī)格書
IRFR220TRPBF規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Surface Mount (IRFR220/SiHFR220)
? Straight Lead (IRFU220/SiHFU220)
? Available in Tape and Reel
? Fast Switching
? Ease of Paralleling
? Lead (Pb)-free Available
產品屬性
- 型號：
IRFR220TRPBF
- 功能描述：
MOSFET N-Chan 200V 4.8 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
22+ |
NA |
6500 |
原廠原裝現貨 |
詢價 | ||
VISHAY |
23+ |
TO252 |
12000 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
07+ |
TO-252 |
9800 |
詢價 | |||
IR |
23+ |
D-PAK |
19526 |
詢價 | |||
VISHAY/威世 |
10+ |
TO252 |
28322 |
進口盤袋現貨/2K |
詢價 | ||
Vishay Siliconix |
24+ |
D-Pak |
30000 |
晶體管-分立半導體產品-原裝正品 |
詢價 | ||
VISHAY/威世 |
24+ |
TO252 |
880000 |
明嘉萊只做原裝正品現貨 |
詢價 | ||
VISHAY/威世 |
23+ |
TO252 |
6000 |
專業(yè)配單保證原裝正品假一罰十 |
詢價 | ||
VISHAY |
22+ |
NA |
10000 |
全新原裝正品現貨 |
詢價 | ||
IR |
TO252 |
9500 |
一級代理 原裝正品假一罰十價格優(yōu)勢長期供貨 |
詢價 |
