首頁 >IRFR220NCPBF>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
HEXFETPowerMOSFET Applications ?HighfrequencyDC-DCconverters ?Lead-Free Benefits ?LowGatetoDrainChargetoReduceSwitchingLosses ?FullyCharacterizedCapacitanceIncludingEffectiveCOSStoSimplifyDesign,(SeeApp.NoteAN1001) ?FullyCharacterizedAvalancheVoltageandCurrent | IRF International Rectifier | IRF | ||
SMPSMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HEXFETPowerMOSFET | IRF International Rectifier | IRF | ||
SMPSMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
HighfrequencyDC-DCconverters | IRF International Rectifier | IRF | ||
HEXFEPPowerMOSFET HEXFEP?PowerMOSFETVdss=200VRDS(on)=0.80?ID=4.8A | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestr | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay |
詳細參數(shù)
- 型號:
IRFR220NCPBF
- 功能描述:
MOSFET N-CH 200V 5A DPAK
- RoHS:
是
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
23+ |
TO-252 |
11846 |
一級代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢價 | ||
INFINEON |
1503+ |
TO-252 |
3000 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨詢更多詳細信息, |
詢價 | ||
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原廠渠道,現(xiàn)貨配單 |
詢價 | ||
Infineon Technologies |
21+ |
TO2523 DPak (2 Leads + Tab) SC |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
INFINEON/英飛凌 |
23+ |
TO252 |
28888 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
Infineon Technologies |
23+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原裝正品,支持實單 |
詢價 | ||
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務(wù) |
詢價 | ||
Infineon Technologies |
2022+ |
TO-252-3,DPak(2 引線 + 接片 |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨立分銷 |
詢價 | ||
Infineon Technologies |
23+ |
原裝 |
8000 |
只做原裝現(xiàn)貨 |
詢價 |
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