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IRFR13N20DPBF中文資料KERSEMI數(shù)據手冊PDF規(guī)格書
IRFR13N20DPBF規(guī)格書詳情
Benefits
? Low Gate to Drain Charge to Reduce Switching Losses
? Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001)
? Fully Characterized Avalanche Voltage and Current
Applications
? High frequency DC-DC converters
? Lead-Free
產品屬性
- 型號:
IRFR13N20DPBF
- 功能描述:
MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導通):
0.014 Ohms
- 配置:
Single
- 安裝風格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
2016+ |
TO252 |
5623 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
IR |
23+ |
NA/ |
35615 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
IR |
22+ |
DPAK |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
IR |
2021+ |
TO-252 |
3500 |
十年專營原裝現(xiàn)貨,假一賠十 |
詢價 | ||
IR |
23+ |
TO-252 |
9896 |
詢價 | |||
IR |
1822+ |
TO-252 |
6852 |
只做原裝正品假一賠十為客戶做到零風險!! |
詢價 | ||
Infineon(英飛凌) |
23+ |
TO252 |
7350 |
現(xiàn)貨供應,當天可交貨!免費送樣,原廠技術支持!!! |
詢價 | ||
IR |
22+ |
TO-252 |
21350 |
原裝正品,實單請聯(lián)系 |
詢價 | ||
IR |
23+ |
SOT-252 |
65400 |
詢價 | |||
IR |
24+ |
TO-252 |
300 |
詢價 |