IRFR120Z中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRFR120Z規(guī)格書詳情
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications, this HEXFET? Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
產品屬性
- 型號:
IRFR120Z
- 功能描述:
MOSFET N-CH 100V 8.7A DPAK
- RoHS:
否
- 類別:
分離式半導體產品 >> FET - 單
- 系列:
HEXFET®
- 標準包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應商設備封裝:
TO-220FP
- 包裝:
管件
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原裝 |
5000 |
原裝正品,提供BOM配單服務 |
詢價 | ||
IR |
22+ |
原廠封裝 |
9450 |
原裝正品,實單請聯(lián)系 |
詢價 | ||
Infineon/英飛凌 |
23+ |
DPAK |
25000 |
原裝正品,假一賠十! |
詢價 | ||
Infineon/英飛凌 |
2023+ |
DPAK |
6000 |
全新原裝深圳倉庫現(xiàn)貨有單必成 |
詢價 | ||
IR |
2022+ |
D-PAK |
48000 |
只做原裝,原裝,假一罰十 |
詢價 | ||
Infineon/英飛凌 |
21+ |
DPAK |
10000 |
原裝,品質保證,請來電咨詢 |
詢價 | ||
IR |
23+ |
NA/ |
5250 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
詢價 | ||
IR |
21+ |
TO-252 |
12588 |
原裝正品,自己庫存 假一罰十 |
詢價 | ||
IR |
2020+ |
TO-252 |
80000 |
只做自己庫存,全新原裝進口正品假一賠百,可開13%增 |
詢價 | ||
IR |
23+ |
TO-252 |
32798 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 |