首頁 >IRFN9140SMD>規(guī)格書列表
零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFN9140SMD | P-CHANNEL POWER MOSFET | SEME-LAB Seme LAB | SEME-LAB | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
19A,100V,0.200Ohm,P-ChannelPowerMOSFET ThisisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ItisaP-Channelenhancementmodesilicongatepowerfieldeffecttransistordesignedforapplicationssuchasswitchingregulators,switchingc | Intersil Intersil Corporation | Intersil | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fsatswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliability | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
P-CHANNELPOWERMOSFETS FEATURES ?LowRDS(on) ?Improvedinductiveruggedness ?Fastswitchingtimes ?Ruggedpolysilicongatecellstructure ?Lowinputcapacitance ?Extendedsafeoperatingarea ?Improvedhightemperaturereliablility | SamsungSamsung semiconductor 三星三星半導體 | Samsung | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?P-channel ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatash | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
PowerMOSFET(Vdss=-100V,Rds(on)=0.117ohm,Id=-23A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
HEXFET?PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
ADVANCEDPROCESSTECHNOLOGY | IRF International Rectifier | IRF | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
HEXFET?PowerMOSFET | IRF International Rectifier | IRF | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導體 | Vishay | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導體股份有限公司 | ISC | ||
POWERMOSFETTHRU-HOLE(TO-257AA) 100V,P-CHANNELHEXFET?MOSFETTECHNOLOGY HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallo | IRF International Rectifier | IRF | ||
P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
P-CHANNELPOWERMOSFETFORHI-RELAPPLICATIONS | SEME-LAB Seme LAB | SEME-LAB | ||
POWERMOSFETTHRU-HOLE(TO-257AA) 100V,P-CHANNELHEXFET?MOSFETTECHNOLOGY HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallo | IRF International Rectifier | IRF |
詳細參數(shù)
- 型號:
IRFN9140SMD
- 制造商:
SEME-LAB
- 制造商全稱:
Seme LAB
- 功能描述:
P-CHANNEL POWER MOSFET
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IRF |
23+ |
NA |
19960 |
只做進口原裝,終端工廠免費送樣 |
詢價 | ||
IR |
2018+ |
SMD |
44 |
“芯達集團”專營軍工百分之百原裝進口 |
詢價 | ||
IR |
18+ |
SMD |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
詢價 | ||
IR |
專業(yè)軍工 |
NA |
1000 |
只做原裝正品軍工級部分訂貨 |
詢價 | ||
IR |
專業(yè)軍工 |
NA |
1000 |
只做原裝正品 |
詢價 | ||
IR |
23+ |
SMD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
CHINA |
22+ |
SMD-1 |
640 |
航宇科工半導體-央企合格優(yōu)秀供方! |
詢價 | ||
IR |
1341+ |
SMD |
14 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
IR |
22+ |
N/A |
6000 |
終端可免費供樣,支持BOM配單 |
詢價 | ||
INFINEON |
23+ |
C-CCN-3 |
14253 |
原包裝原標現(xiàn)貨,假一罰十, |
詢價 |
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