零件編號(hào) | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
IRFM250D | N–CHANNEL POWER MOSFET VDSS200V ID(cont)27.4A RDS(on)0.100? FEATURES ?N–CHANNELMOSFET ?HIGHVOLTAGE ?INTEGRALPROTECTIONDIODE ?HERMETICISOLATEDTO-254PACKAGE ?CERAMICSURFACEMOUNTPACKAGE OPTION | SEME-LAB Seme LAB | SEME-LAB | |
POWERMOSFETN-CHANNEL(BVdss=200V,Rds(on)=0.100ohm,Id=27.4A) RDS(on)0.100? ID27.4A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-estab | IRF International Rectifier | IRF | ||
N??HANNELPOWERMOSFET FEATURES ?HERMETICALLYSEALEDSURFACEMOUNTPACKAGE ?SMALLFOOTPRINT–EFFICIENTUSEOFPCBSPACE. ?SIMPLEDRIVEREQUIREMENTS ?LIGHTWEIGHT ?HIGHPACKINGDENSITIES | SEME-LAB Seme LAB | SEME-LAB | ||
SimpleDriveRequirements | IRF International Rectifier | IRF | ||
N-CHANNELPOWERMOSFET | SEME-LAB Seme LAB | SEME-LAB | ||
N-CHANNEL200V-0.073ohm-33ATO-247PowerMeshIIMOSFET DESCRIPTION ThePowerMESH?IIistheevolutionofthefirstgenerationofMESHOVERLAY?.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0. | STMICROELECTRONICSSTMicroelectronics 意法半導(dǎo)體意法半導(dǎo)體(ST)集團(tuán) | STMICROELECTRONICS | ||
N-ChannelPowerMosfets
| SamsungSamsung semiconductor 三星三星半導(dǎo)體 | Samsung | ||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features ?32A,200V,RDS(on)=0.085?@VGS=10V ?Lowgatecharge(typical95nC) ?LowCrss(typical75pF) ?Fastswitching ?100ava | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild | ||
N-Channel(HexfetTransistors)
| IRF International Rectifier | IRF | ||
PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRF International Rectifier | IRF | ||
StandardPowerMOSFET N-ChannelEnhancementMode Features ?InternationalstandardpackageJEDECTO-247AD ?LowRDS(on)HDMOSTMprocess ?Ruggedpolysilicongatecellstructure ?Highcommutatingdv/dtrating ?Fastswitchingtimes Applications ?Switch-modeandresonant-modepowersupplies ?Motorcontrols | IXYS IXYS Corporation | IXYS | ||
HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries FEATURES: ?Fastswitchingtimes ?LowRDS(on)HDMOS?process ?Ruggedpolysilicongatecellstructure ?Excellenthighvoltagestability ?Lowinputcapacitance ?Improvedhightemperaturereliability APPLICATIONS: ?Switchingpowersupplies ?Motorcontrols ?AudioAmplifiers ?Invert | IXYS IXYS Corporation | IXYS | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
iscN-ChannelMOSFETTransistor DESCRIPTION ·Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司 | THINKISEMI | ||
SEMICONDUCTORS | etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商 | etc2 | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?Fastswitching ?EaseofParalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技威世科技半導(dǎo)體 | Vishay | ||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.071Ω(Typ.) | FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司 | Fairchild |
詳細(xì)參數(shù)
- 型號(hào):
IRFM250D
- 功能描述:
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 27A I(D) | TO-254VAR
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
N/A |
90000 |
原廠正規(guī)渠道現(xiàn)貨、保證原裝正品價(jià)格合理 |
詢價(jià) | ||
IR |
24+ |
24 |
全新原裝 |
詢價(jià) | |||
IR |
N/A |
N/A |
100 |
軍工品,原裝正品 |
詢價(jià) | ||
IR |
18+ |
原廠原裝假一賠十 |
24 |
原廠很遠(yuǎn)現(xiàn)貨很近,找現(xiàn)貨選星佑電子,原廠原裝假一賠 |
詢價(jià) | ||
IR |
2022+ |
24 |
只做原裝,價(jià)格優(yōu)惠,長期供貨。 |
詢價(jià) | |||
IR |
22+ |
N/A |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
SMD |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
SMD |
7000 |
詢價(jià) | |||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價(jià) | ||
IR |
2018+ |
SMD |
219 |
“芯達(dá)集團(tuán)”專營軍工百分之百原裝進(jìn)口 |
詢價(jià) |
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