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IRFIBC20G

Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=1.7A)

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?IsolatedPackage ?HighVoltageIsolation=2.5KVRMS ?SinktoLeadCreepageDist.=4.8

IRF

International Rectifier

IRFIBC20G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicati

VishayVishay Siliconix

威世科技威世科技半導體

IRFIBC20G

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

IRFIBC20G

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFIBC20GPBF

HEXFET Power MOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ?IsolatedPackage ?HighVoltageIsolation=2.5KVRMS ?SinktoLeadCreepageDist.=4.8

IRF

International Rectifier

IRFIBC20GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicati

VishayVishay Siliconix

威世科技威世科技半導體

IRFIBC20GPBF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KERSEMI

Kersemi Electronic Co., Ltd.

詳細參數(shù)

  • 型號：

    IRFIBC20G

  • 功能描述：

    MOSFET N-Chan 600V 1.7 Amp

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
IR
24+
TO 220
161262
明嘉萊只做原裝正品現(xiàn)貨
 詢價
IR
23+
TO-220F
9896
詢價
IR
2015+
TO-220F
12500
全新原裝,現(xiàn)貨庫存長期供應
 詢價
IR
06+
TO-220
4500
全新原裝 絕對有貨
 詢價
IR
23+
TO-220Fu
7600
全新原裝現(xiàn)貨
 詢價
IR
2020+
TO220F
58
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
 詢價
IR
24+
TO220
6800
絕對原裝!真實庫存!
 詢價
IR
24+
TO-220FullPak(Iso)
8866
詢價
IR
2018+
TO220
6528
承若只做進口原裝正品假一賠十!
 詢價
IRF
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
更多IRFIBC20G供應商 更新時間2025-4-21 8:10:00

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