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IRFM150

REPETITIVEAVALANCHERATEDANDdv/dtRATED

REPETITIVEAVALANCHERATEDANDdv/dtRATEDHEXFETTRNANSISTOR 100Volt,0.07OhmHEXFET

IRF

International Rectifier

IRFM150

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFM150

SimpleDriveRequirements

IRF

International Rectifier

IRFN150

POWERMOSFETN-CHANNEL(BVdss=100V,Rds(on)=0.060ohm,Id=34A)

RDS(on)0.07? ID34A HEXFET?MOSFETtechnologyisthekeytoInternationalRectifier’sadvancedlineofpowerMOSFETtransistors.Theefficientgeometrydesignachievesverylowon-stateresistancecombinedwithhightransconductance.HEXFETtransistorsalsofeatureallofthewell-establis

IRF

International Rectifier

IRFN150

SimpleDriveRequirements

IRF

International Rectifier

IRFN150SMD

N-CHANNELPOWERMOSFET

SEME-LAB

Seme LAB

IRFP150

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea 175OperatingTemperature LowerLeakageCurrent:10A(Max.)@VDS=100V LowerRDS(ON):0.032?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFP150

PowerMOSFET(Vdss=100V,Rds(on)=0.035W,Id=42A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRF

International Rectifier

IRFP150

HIGHVOLTAGEPOWERMOSFETDIE

FEATURES: ●Fastswitchingtimes ●LOWRDS(on)HDMOS?process ●Ruggedpolyslllcongatecellstructure ●Excellenthighvoltagestability ●Lowinputcapacitance ●Improvedhightemperaturereliability APPLICATIONS ●Switchingpowersupplies ●Motorcontrols ●AudioAmplifiers ●Inver

IXYS

IXYS Corporation

IRFP150

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-247ACpackageispreferredforcommercial-industrialapplicationswherehigherpowerlevelspreclude

VishayVishay Siliconix

威世科技威世科技半導體

IRFP150

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP150

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP150

SEMICONDUCTORS

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

IRFP150

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRFP150

PowerMOSFET

FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Isolatedcentralmountinghole ?175°Coperatingtemperature ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Not

VishayVishay Siliconix

威世科技威世科技半導體

IRFP150A

AdvancedPowerMOSFET

FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea 175OperatingTemperature LowerLeakageCurrent:10A(Max.)@VDS=100V LowerRDS(ON):0.032?(Typ.)

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRFP150A

N-ChannelMOSFETTransistor

TGS

Tiger Electronic Co.,Ltd

IRFP150A

100V,60AHeatsinkN-ChannelTypePowerMOSFET

THINKISEMIThinki Semiconductor Co., Ltd.

思祁半導體思祁半導體有限公司

IRFP150A

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRFP150FI

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

詳細參數(shù)

  • 型號:

    IRFH150

  • 功能描述:

    TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-210AC

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IR
23+
原廠封裝
8238
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IR
22+
G
6000
終端可免費供樣,支持BOM配單
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IR
23+
G
8000
只做原裝現(xiàn)貨
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IR
23+
G
7000
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SIL
05+
原廠原裝
4290
只做全新原裝真實現(xiàn)貨供應
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SIL
23+
65480
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23+
10000
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IRF
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DFN
69000
全新原裝現(xiàn)貨熱賣/代理品牌/可申請樣品和規(guī)格書
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英飛凌
21+
PQFN 3X3 8L
6000
絕對原裝現(xiàn)貨
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INFINE0N
21+
S3O8 (3x3mm style SuperSO8)
32568
100%進口原裝!長期供應!絕對優(yōu)勢價格(誠信經(jīng)營
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更多IRFH150供應商 更新時間2025-1-2 17:13:00