首頁>IRFBG30PBF>規(guī)格書詳情
IRFBG30PBF中文資料KERSEMI數(shù)據(jù)手冊PDF規(guī)格書
IRFBG30PBF規(guī)格書詳情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
FEATURES
? Dynamic dV/dt Rating
? Repetitive Avalanche Rated
? Fast Switching
? Ease of Paralleling
? Simple Drive Requirements
? Lead (Pb)-free Available
產(chǎn)品屬性
- 型號：
IRFBG30PBF
- 功能描述：
MOSFET 1000V Single N-Channel HEXFET
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導通）：
0.014 Ohms
- 配置：
Single
- 安裝風格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
VISHAY |
22+ |
TO-220 |
20000 |
深圳原裝現(xiàn)貨正品有單價格可談 |
詢價 | ||
VISHAY |
16+ |
TO220 |
5 |
原裝 |
詢價 | ||
24+ |
N/A |
67000 |
一級代理-主營優(yōu)勢-實惠價格-不悔選擇 |
詢價 | |||
原裝IR |
19+ |
TO-220 |
20000 |
詢價 | |||
VISHAY/威世 |
24+ |
TO-220 |
5530 |
只做原廠渠道 可追溯貨源 |
詢價 | ||
VISHAY/威世 |
2021+ |
TO-220AB |
12000 |
勤思達 只做原裝 現(xiàn)貨庫存 |
詢價 | ||
VISHAY/威世 |
2023+ |
TO-220 |
12000 |
全新原裝正品,優(yōu)勢價格 |
詢價 | ||
VISHAY(威世) |
2112+ |
TO-220(TO-220-3) |
105000 |
50片/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期 |
詢價 | ||
VISHAY/威世 |
23+ |
TO-220 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
VISHAY/威世 |
24+ |
TO-2AB |
860000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 |
