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IRF9Z34NSTRRPBF

AdvancedProcessTechnology

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IRF

International Rectifier

IRF9Z34PBF

HEXFET?PowerMOSFET

IRF

International Rectifier

IRF9Z34PBF

PowerMOSFETDynamicdV/dtRatingRepetitiveAvalancheRatedP-Channel

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9Z34PBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34S

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34S

PowerMOSFET(Vdss=-60V,Rds(on)=0.14ohm,Id=-18A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34S

PowerMOSFET

FEATURES ?Advancedprocesstechnology ?Surfacemount(IRF9Z34S,SiHF9Z34S) ?175°Coperatingtemperature ?Fastswitching ?P-channel ?Fullyavalancherated ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note? *Thisdatasheetprovidesin

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34SPBF

PowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

IRF9Z34SPBF

SurfaceMount

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi

IRF

International Rectifier

IRF9Z34SPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

詳細(xì)參數(shù)

  • 型號(hào)：

    IRF9Z34NSTRLPBF

  • 功能描述：

    MOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導(dǎo)通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風(fēng)格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
IR
2020+
TO-263
22000
全新原裝正品 現(xiàn)貨庫(kù)存 價(jià)格優(yōu)勢(shì)
 詢(xún)價(jià)
INFINEON
新年份
N/A
20000
原裝現(xiàn)貨,質(zhì)量保證,可出樣品可開(kāi)稅票
 詢(xún)價(jià)
INFINEON/IR
1907+
NA
1600
20年老字號(hào),原裝優(yōu)勢(shì)長(zhǎng)期供貨
 詢(xún)價(jià)
INFINEON
22+
TO-263-2
23200
原裝正品可支持驗(yàn)貨,歡迎咨詢(xún)
 詢(xún)價(jià)
Infineon Technologies
24+
D2PAK
30000
晶體管-分立半導(dǎo)體產(chǎn)品-原裝正品
 詢(xún)價(jià)
IR
SOT-263
30216
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S
 詢(xún)價(jià)
IR
16+
TO-263
6312
全新原裝/深圳現(xiàn)貨庫(kù)2
 詢(xún)價(jià)
INFINEON/英飛凌
17+
TO-263
100
進(jìn)口原裝支持含稅
 詢(xún)價(jià)
INFINEON/英飛凌
24+
TO-263
23
只做原廠渠道 可追溯貨源
 詢(xún)價(jià)
Infineon
2216
TO-263
800
原裝正品老板王磊+13925678267
 詢(xún)價(jià)
更多IRF9Z34NSTRLPBF供應(yīng)商 更新時(shí)間2025-1-30 11:03:00

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