IRF9Z14S_V01中文資料威世科技數(shù)據(jù)手冊PDF規(guī)格書

FEATURES

? Advanced process technology

? Surface-mount (IRF9Z14S, SiHF9Z14S)

? Low-profile through-hole (IRF9Z14L, SiHF9Z14L)

? 175 °C operating temperature

? Fast switching

? P-channel

? Fully avalanche rated

? Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

* This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay utilize

advanced processing techniques to achieve extremely low

on-resistance per silicon area. This benefit, combined with

the fast switching speed and ruggedized device design that

Power MOSFETs are well known for, provides the designer

with an extremely efficient and reliable device for use in a

wide variety of applications.

The D2PAK is a surface-mount power package capable of

accommodating die size up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D2PAK is suitable for high current applications because of is

low internal connection resistance and can dissipate up to

2.0 W in a typical surface mount application.

The through-hole version (IRF9Z14L, SiHF9Z14L) is

available for low-profile applications.