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IRF830B

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredto minimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

IRF830B

500V N-Channel MOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

KERSEMI

Kersemi Electronic Co., Ltd.

IRF830B

Reduced capacitive switching losses

FEATURES ?Optimaldesign -Lowareaspecificon-resistance -Lowinputcapacitance(Ciss) -Reducedcapacitiveswitchinglosses -Highbodydioderuggedness -Avalancheenergyrated(UIS) ?Optimalefficiencyandoperation -Lowcost -Simplegatedrivecircuitry

VishayVishay Siliconix

威世科技威世科技半導體

IRF830B

D Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF830B_V01

D Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF830BPBF

D Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF830BPBF-BE3

D Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半導體

IRF830F

4.4A,500V,1.5廓N-CHANNELPOWERMOSFET

DESCRIPTION ?IRF830is500VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ?Advancedterminationschemetoprovideenhancedvoltageblockingcapability; ?AvalancheEnergySpecified; ?Source-to-DrainDiodeRecove

FS

First Silicon Co., Ltd

IRF830FI

iscN-ChannelMOSFETTransistor

DESCRIPTION ?DrainCurrent–ID=3.0A@TC=25℃ ?DrainSourceVoltage- :VDSS=500V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max) ?FastSwitchingSpeed ?SimpleDriveRequirements APPLICATIONS ?Desingedforhighefficiencyswitchmodepowersupply.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

IRF830FP

POWERMOSFET

GENERALDESCRIPTION ThisPowerMOSFETisdesignedforlowvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,conveters,solenoidandrelaydrivers. FEATURES HigherCurrentRating LowerrDS(ON),LowerCapacitances LowerTotalGateCharge TighterVSD

SUNTAC

Suntac Electronic Corp.

詳細參數(shù)

  • 型號：

    IRF830B

  • 功能描述：

    MOSFET

  • RoHS：

    否

  • 制造商：

    STMicroelectronics

  • 晶體管極性：

    N-Channel

  • 汲極/源極擊穿電壓：

    650 V

  • 閘/源擊穿電壓：

    25 V

  • 漏極連續(xù)電流：

    130 A 電阻汲極/源極

  • RDS（導通）：

    0.014 Ohms

  • 配置：

    Single

  • 安裝風格：

    Through Hole

  • 封裝/箱體：

    Max247

  • 封裝：

    Tube

供應商型號品牌批號封裝庫存備注價格
FAIRCHILD
19+
TO-220
32000
詢價
FSC
23+
TO-220
5000
詢價
FAIRCHILD/仙童
24+
TO-220
2368
只做原廠渠道 可追溯貨源
 詢價
onsemi(安森美)
23+
TO-220
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
 詢價
FSC
2015+
SOP/DIP
19889
一級代理原裝現(xiàn)貨,特價熱賣!
 詢價
仙童
06+
TO-220
5000
原裝庫存
 詢價
仙童
23+
TO220
1581
專業(yè)優(yōu)勢供應
 詢價
IR
23+
TO-220
20000
詢價
FSC
6200
TO-220
17
100%原裝正品現(xiàn)貨
 詢價
FSC
2016+
TO-220
6000
公司只做原裝,假一罰十,可開17%增值稅發(fā)票!
 詢價
更多IRF830B供應商 更新時間2025-1-20 16:04:00

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