IRF7705中文資料IRF數(shù)據(jù)手冊PDF規(guī)格書
IRF7705規(guī)格書詳情
Description
HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
The TSSOP-8 package has 45 less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (
? Ultra Low On-Resistance
? P-Channel MOSFET
? Very Small SOIC Package
? Low Profile ( < 1.2mm)
? Available in Tape & Reel
產(chǎn)品屬性
- 型號:
IRF7705
- 功能描述:
MOSFET P-CH 30V 8A 8-TSSOP
- RoHS:
否
- 類別:
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列:
HEXFET®
- 標(biāo)準(zhǔn)包裝:
1,000
- 系列:
MESH OVERLAY™ FET
- 型:
MOSFET N 通道,金屬氧化物 FET
- 特點:
邏輯電平門
- 漏極至源極電壓(Vdss):
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C:
18A 開態(tài)Rds(最大)@ Id, Vgs @ 25°
- C:
180 毫歐 @ 9A,10V Id 時的
- Vgs(th)(最大):
4V @ 250µA 閘電荷(Qg) @
- Vgs:
72nC @ 10V 輸入電容(Ciss) @
- Vds:
1560pF @ 25V 功率 -
- 最大:
40W
- 安裝類型:
通孔
- 封裝/外殼:
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝:
TO-220FP
- 包裝:
管件
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
IR |
1112 |
200 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | |||
IR |
2006 |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
IOR |
22+23+ |
TSSOP8 |
30100 |
絕對原裝正品全新進口深圳現(xiàn)貨 |
詢價 | ||
IR |
TSSOP8 |
68900 |
原包原標(biāo)簽100%進口原裝常備現(xiàn)貨! |
詢價 | |||
IOR |
2023+ |
SOP-8 |
5800 |
進口原裝,現(xiàn)貨熱賣 |
詢價 | ||
IR |
6000 |
面議 |
19 |
TSSOP8 |
詢價 | ||
IR |
22+ |
TSSOP8 |
5000 |
全新原裝現(xiàn)貨!自家?guī)齑? |
詢價 | ||
IR |
17+ |
MSOP8 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價 | ||
IRC |
1535+ |
252 |
詢價 | ||||
Infineon Technologies |
21+ |
8TSSOP |
13880 |
公司只售原裝,支持實單 |
詢價 |