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IRF737LCPBF規(guī)格書詳情
Description
This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new Low Charge MOSFETs.
These device improvements combined with the proven ruggedness and reliability that are characteristics of HEXFETs offer the designer a new standard in power transistors for switching applications.
● Reduced Gate Drive Requirement
● Enhanced 30V VGS Rating
● Reduced CISS, COSS, CRSS
● Extremely High Frequency Operation
● Repetitive Avalanche Rated
● Lead-Free
產(chǎn)品屬性
- 型號：
IRF737LCPBF
- 功能描述：
MOSFET N-Chan 300V 6.1 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶體管極性：
N-Channel
- 汲極/源極擊穿電壓：
650 V
- 閘/源擊穿電壓：
25 V
- 漏極連續(xù)電流：
130 A 電阻汲極/源極
- RDS（導(dǎo)通）：
0.014 Ohms
- 配置：
Single
- 安裝風(fēng)格：
Through Hole
- 封裝/箱體：
Max247
- 封裝：
Tube
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
NA/ |
4357 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號開票 |
詢價 | ||
原裝正品 |
23+ |
TO-263 |
67067 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價 | ||
Vishay Siliconix |
21+ |
TO2203 |
13880 |
公司只售原裝,支持實單 |
詢價 | ||
IR |
19+ |
TO-220 |
25 |
全新原裝只做自己庫存只做原裝 |
詢價 | ||
Vishay Siliconix |
23+ |
TO2203 |
9000 |
原裝正品，支持實單 |
詢價 | ||
IR |
2022 |
TO-220 |
80000 |
原裝現(xiàn)貨,OEM渠道,歡迎咨詢 |
詢價 | ||
IR |
22+ |
SOT263 |
8000 |
原裝正品支持實單 |
詢價 | ||
VB |
TO-263 |
68900 |
原包原標(biāo)簽100%進(jìn)口原裝常備現(xiàn)貨! |
詢價 | |||
IRF |
23+ |
NA |
19960 |
只做進(jìn)口原裝,終端工廠免費(fèi)送樣 |
詢價 | ||
VishayIR |
24+ |
TO-220AB |
276 |
詢價 |
