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IRF734	文件：2.10487 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness.TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipatio	VishayVishay Siliconix 威世科技威世科技半導體	Vishay
IRF7341	文件：134.99 Kbytes Page：7 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRF7341	文件：379.66 Kbytes Page：7 Pages	Generation V Technology TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboardspace.Thepa	UMWUMW Rightway Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司(簡稱UMW?)	UMW
IRF7341	文件：340.07 Kbytes Page：7 Pages	MOSFET Description TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboard	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體	EVVOSEMI
IRF7341GPBF	文件：205.3 Kbytes Page：9 Pages	HEXFET? Power MOSFET Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe	IRF International Rectifier	IRF
IRF7341GTRPbF	文件：205.3 Kbytes Page：9 Pages	HEXFET? Power MOSFET Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe	IRF International Rectifier	IRF
IRF7341PBF	文件：158.59 Kbytes Page：7 Pages	HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieve extremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedand ruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,	IRF International Rectifier	IRF
IRF7341Q	文件：156.51 Kbytes Page：9 Pages	HEXFET Power MOSFET Description SpecificallydesignedforAutomotiveapplications,theseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseAutomotivequalifiedHEXFETPowerMOSFET’sarea17	IRF International Rectifier	IRF
IRF7341QPBF	文件：231.77 Kbytes Page：9 Pages	HEXFET? Power MOSFET Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe	IRF International Rectifier	IRF
IRF7341QPBF	文件：218.6 Kbytes Page：9 Pages	Advanced Process Technology Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe	IRF International Rectifier	IRF
IRF7341QTRPBF	文件：218.6 Kbytes Page：9 Pages	Advanced Process Technology Description TheseHEXFET?PowerMOSFET’sinaDualSO-8packageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFET’sarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepe	IRF International Rectifier	IRF
IRF7341TR	文件：117.72 Kbytes Page：7 Pages	HEXFET? Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide	IRF International Rectifier	IRF
IRF7341TR	文件：379.66 Kbytes Page：7 Pages	Generation V Technology TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboardspace.Thepa	UMWUMW Rightway Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司(簡稱UMW?)	UMW
IRF7341TR	文件：340.07 Kbytes Page：7 Pages	MOSFET Description TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharacteristicsand multiple-diecapabilitymakingitidealinavarietyof powerapplications.Withtheseimprovements,multiple devicescanbeusedinanapplicationwithdramatically reducedboard	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體	EVVOSEMI
IRF7341TRPBF	文件：1.1291 Mbytes Page：9 Pages	Dual N-Channel 60 V (D-S) 175 ?C MOSFET FEATURES ?TrenchFET?powerMOSFET ?100RgandUIStested	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導體微碧半導體（臺灣）有限公司	VBSEMI
IRF7342	文件：136.93 Kbytes Page：7 Pages	Power MOSFET VDSS=-55V RDS(on)=0.105? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPo	IRF International Rectifier	IRF
IRF7342	文件：347.05 Kbytes Page：7 Pages	Dual P-Channel MOSFET GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=-55V RDS(ON)105m(VGS=-10V) Features RDS(ON)170m(VGS=-4.5V) TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharac	UMWUMW Rightway Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司(簡稱UMW?)	UMW
IRF7342	文件：334.84 Kbytes Page：7 Pages	Dual P-Channel MOSFET Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=-55V RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體	EVVOSEMI
IRF7342TR	文件：347.05 Kbytes Page：7 Pages	Dual P-Channel MOSFET GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=-55V RDS(ON)105m(VGS=-10V) Features RDS(ON)170m(VGS=-4.5V) TheSOP-8hasbeenmodifiedthroughacustomized leadframeforenhancedthermalcharac	UMWUMW Rightway Semiconductor Co., Ltd. 友臺半導體廣東友臺半導體有限公司(簡稱UMW?)	UMW
IRF7342TR	文件：334.84 Kbytes Page：7 Pages	Dual P-Channel MOSFET Features GenerationVTechnology UltraLowOn-Resistance SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free VDS(V)=-55V RDS(ON)	EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊歐翊歐半導體	EVVOSEMI

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詳細參數(shù)

型號：
IRF734
功能描述：
MOSFET N-CH 450V 4.9A TO-220AB
RoHS：
否
類別：
分離式半導體產(chǎn)品 >> FET - 單
系列：
-
標準包裝：
1,000
系列：
MESH OVERLAY™ FET
型：
MOSFET N 通道，金屬氧化物 FET
特點：
邏輯電平門
漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
C：
180 毫歐 @ 9A，10V Id 時的
Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
Vgs：
72nC @ 10V 輸入電容(Ciss) @
Vds：
1560pF @ 25V 功率 -
最大：
40W
安裝類型：
通孔
封裝/外殼：
TO-220-3 整包
供應商設(shè)備封裝：
TO-220FP
包裝：
管件

供應商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市匯萊威科技有限公司	IRF734	IR	24+	T0-220	500771	免費送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價
深圳市一線半導體有限公司	IRF734	IR	24+	TO-220-3	8866		詢價
深圳市昌和盛利電子有限公司	IRF734	IR	23+	TO-220	35890		詢價
深圳市星佑電子有限公司	IRF734	IR	05+	原廠原裝	1184	只做全新原裝真實現(xiàn)貨供應	詢價
深圳市勤思達科技有限公司	IRF734	IR	2015+	TO-220AB	12500	全新原裝,現(xiàn)貨庫存長期供應	詢價
深圳市博浩通科技有限公司	IRF734	IR	23+	TO-220AB	8600	全新原裝現(xiàn)貨	詢價
深圳市歐立現(xiàn)代科技有限公司	IRF734	ir	24+	N/A	6980	原裝現(xiàn)貨,可開13%稅票	詢價
深圳市科恒偉業(yè)電子有限公司	IRF734	IR/FSC	1738+	TO-220	8529	科恒偉業(yè)!只做原裝正品,假一賠十!	詢價
深圳市錦喆鴻電子有限公司	IRF734	IOR	21+	TO220	12588	原裝正品,自己庫存假一罰十	詢價
中天科工半導體（深圳）有限公司	IRF734	IR/VISHAY	20+	D2-PAK	36900	原裝優(yōu)勢主營型號-可開原型號增稅票	詢價

更多IRF734供應商更新時間2024-11-18 16:40:00

詳細參數(shù)

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