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首頁 >IRF730ASTRRPBF>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
IRF730ASTRRPBF	文件：166.34 Kbytes Page：8 Pages	Power MOSFET FEATURES ?LowGateChargeQgResultsinSimpleDriveRequirement ?ImprovedGate,AvalancheandDynamicdV/dtRuggedness ?FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ?EffectiveCossSpecified ?Lead(Pb)-freeAvailable APPLICATIONS ?SwitchModePowe	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730B	文件：898.57 Kbytes Page：10 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRF730B	文件：293.32 Kbytes Page：8 Pages	LowAreaSpecificOn-Resistance FEATURES ?OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730B	文件：3.10167 Mbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
IRF730B	文件：201.45 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor DESCRIPTION ?DrainCurrent–ID=5.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowers	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF730B	文件：173.28 Kbytes Page：8 Pages	DSeriesPowerMOSFET FEATURES ?OptimalDesign -LowAreaSpecificOn-Resistance -LowInputCapacitance(Ciss) -ReducedCapacitiveSwitchingLosses -HighBodyDiodeRuggedness -AvalancheEnergyRated(UIS) ?OptimalEfficiencyandOperation -LowCost -SimpleGateDriveCircuitry -LowFigure-of-Merit(	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730F	文件：365.66 Kbytes Page：6 Pages	6.0A,400V,1.0廓N-CHANNELPOWERMOSFET DESCRIPTION ?IRF730is400VHighvoltageN-Channelenhancement modepowerMOS-FETchipfabricatedinadvanced siliconepitaxialplanartechnology; ?Advancedterminationschemetoprovideenhancedvoltage-blockingcapability; ?AvalancheEnergySpecified; ?Source-to-DrainDiodeRecov	FS First Silicon Co., Ltd	FS
IRF730FI	文件：65.269 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor DESCRIPTION ?DrainCurrent–ID=3.5A@TC=25℃ ?DrainSourceVoltage- :VDSS=400V(Min) ?StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max) ?FastSwitchingSpeed APPLICATIONS ?Designedespeciallyforhighvoltage,highspeedapplications, suchasoff-lineswitchingpowersu	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
IRF730FP	文件：451.94 Kbytes Page：3 Pages	6.0A400VNCHANNELPOWERMOSFET	FCIFirst Components International 戈采戈采企業(yè)股份有限公司	FCI
IRF730PBF	文件：134.68 Kbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730PBF	文件：3.58963 Mbytes Page：7 Pages	HEXFETPowerMOSFET	IRF International Rectifier	IRF
IRF730PBF	文件：1.17645 Mbytes Page：6 Pages	6.5A,400VHeatsinkN-ChannelTypePowerMOSFET	THINKISEMIThinki Semiconductor Co., Ltd. 思祁半導(dǎo)體思祁半導(dǎo)體有限公司	THINKISEMI
IRF730PBF	文件：156.83 Kbytes Page：8 Pages	PowerMOSFET FEATURES ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730S	文件：262.3 Kbytes Page：6 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp	IRF International Rectifier	IRF
IRF730S	文件：1.42874 Mbytes Page：5 Pages	N-ChannelMOSFET ■Features ●VDS(V)=400V ●ID=5.5A(VGS=10V) ●RDS(ON)	KEXINGuangdong Kexin Industrial Co.,Ltd 科信電子廣東科信實業(yè)有限公司	KEXIN
IRF730S	文件：173.99 Kbytes Page：9 Pages	RepetitiveAvalancheRated DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheD2PAK(TO-263)isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itprovi	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730S	文件：192.81 Kbytes Page：9 Pages	PowerMOSFET FEATURES ?Surface-mount ?Availableintapeandreel ?DynamicdV/dtrating ?Repetitiveavalancherated ?Fastswitching ?Easeofparalleling ?Simpledriverequirements ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheet	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay
IRF730SPBF	文件：893.24 Kbytes Page：8 Pages	HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSMD-220isasurfacemountpowerpackagecapableofaccommodatingdiesizeuptoHEX-4.Itp	IRF International Rectifier	IRF
IRFI730B	文件：681.53 Kbytes Page：9 Pages	400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstan	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
IRFI730G	文件：1.57493 Mbytes Page：8 Pages	PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialappl	VishayVishay Siliconix 威世科技威世科技半導(dǎo)體	Vishay

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詳細參數(shù)

型號：
IRF730ASTRRPBF
功能描述：
MOSFET N-Chan 400V 5.5 Amp
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市鵬和科技有限公司	IRF730ASTRRPBF	IR	24+	D2PAK	5000	全現(xiàn)原裝公司現(xiàn)貨	詢價
深圳市科雨電子有限公司	IRF730ASTRRPBF	VISHAY	1503+	TO-263	3000	就找我吧!--邀您體驗愉快問購元件!	詢價
深圳市河鋒鑫科技有限公司	IRF730ASTRRPBF	Vishay Siliconix	22+	TO2633 D2Pak (2 Leads + Tab) T	9000	原廠渠道,現(xiàn)貨配單	詢價
深圳市芯福林電子科技有限公司	IRF730ASTRRPBF	Vishay Siliconix	21+	TO2633 D2Pak (2 Leads + Tab) T	13880	公司只售原裝,支持實單	詢價
深圳市勝彬電子有限公司	IRF730ASTRRPBF	IR	22+	D2PAK	8000	原裝正品支持實單	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	IRF730ASTRRPBF	Vishay Siliconix	23+	TO2633 D2Pak (2 Leads + Tab) T	9000	原裝正品，支持實單	詢價
深圳市鵬順微電子科技有限公司	IRF730ASTRRPBF	Vishay Siliconix	2022+	TO-263-3,D2Pak(2 引線 + 接片	38550	全新原裝支持表配單中國著名電子元器件獨立分銷	詢價
深圳市能元時代電子有限公司	IRF730ASTRRPBF	VISHAY	23+	TO-263	62953	##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù)	詢價
深圳市萊克訊科技有限公司	IRF730A-TO220	原裝	1923+	TO220	12600		詢價
深圳市安富世紀電子有限公司	IRF730A其他被動元件	FAIRCHILD/仙童	23+	TO-220	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價

更多IRF730ASTRRPBF供應(yīng)商更新時間2024-10-23 10:20:00

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